Wide-band monolithic phase shifter

Ayasli, Y.; Miller, Sonya K.; Mozzi, R. L.; Hanes, L.K.

doi:10.1109/t-ed.1984.21823

Cited by 9 publications

(3 citation statements)

References 4 publications

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“…The Cartesian phase shifter can achieve a 360° phase shift by using the vector sum of four orthogonal signals of which amplitudes can be varied over a wide dynamic Even though the different distributed types of phase shifters like switched transmission lines [33]- [35], 90°-hybrid coupled lines [36]- [38], and periodic loaded lines [39]- [41] can achieve true time delay along the line sections, their physical sizes make them impractical for integration with multiple arrays in a commercial IC process, especially below K-band frequencies. The physical dimensions of phase shifters are reduced by the migrations from distributed networks to lumped-element configurations, such as synthetic transmission lines with varactors tuning [42]- [44], lumped hybrid-couplers with reflection loads [12], [22], [45] and the combined topologies of lumped low-pass filters and high-pass filters [46]- [48]. However, for fine phase quantization levels over wide operation bandwidth, the size of the lumped passive networks increases a lot, the main reason for which is the use of the various on-chip inductors, and is unsuitable for integrated phased array systems on a chip.…”

Section: Review Of Literaturementioning

confidence: 99%

CMOS phase shifter for conformal phased array beamformer applications

Sanyal

Mendoza-Radal

Ijaz

et al. 2013

IEEE International Conference on Wireless for Space and Extreme Environments

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A vector modulator based phase shifter is developed using 0.18um CMOS process at Sband frequency to be integrated into a conformal phased array antenna to recover the desired radiation pattern in the entire 360° range. The phase shifter has a variable gain amplifier integrated into the circuit in order to vary gain along with phase for precise control to correct the degraded radiation pattern due to the conformal shaping. The results show state-of-the-art performances including more than 7dB conversion gain with variable feature, a continuous phase rotation of 360° with steps as low as 11.25° and very low power consumption of 17mW, for the first time to the best of the authors' knowledge. The chip size including all pads is 1.5mm X 0.75mm. iv ACKNOWLEDGEMENTS Firstly, I would like to thank my academic advisor, Dr. Debasis Dawn for his continuous support, patience and guidance in helping me complete my research work. I would also like to thank Alfonso Mendoza Radal for his support and guidance while working on my research work. ND NASA EPSCoR has supported this project under the agreement FAR0020852. I would like to thank Prof. Benjamin D.

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Section: Review Of Literaturementioning

confidence: 99%

CMOS phase shifter for conformal phased array beamformer applications

Sanyal

Mendoza-Radal

Ijaz

et al. 2013

IEEE International Conference on Wireless for Space and Extreme Environments

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“…With the use of abrupt phase shifting characteristics at around cutoff frequencies of the filters [11]- [12], variable phase shifting can be easily achieved at multiple bands by switching band-pass and band-stop filters. Although the conventional low-pass high-pass phase shifters [13]- [14] are limited to single-band operation, band-pass and band-stop designs can make multi-band operation available. In [1], 90-degree phase shifting has been successfully achieved at dual-band by switching two output ports of the differential amplifier.…”

Section: Introductionmentioning

confidence: 99%

A Dual-Band 90-Degree SiGe HBT Active Phase Shifter Based on Band-Pass and Band-Stop Designs Using Dual-Band Resonators

Itoh¹

2018

Adv. sci. technol. eng. syst. j.

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A dual-band 90-degree SiGe HBT active phase shifter based on band-pass and band-stop designs using dual-band resonators is presented in this paper. The active phase shifter employs differential configuration and has band-pass and band-stop filters in the load circuit. By switching two output ports of the differential amplifier, 90-degree phase shifting has been realized at dual bands. The implemented dual-band active phase shifter using 0.35 micron SiGe HBT has achieved a gain of 9.3 dB and a phase shift of 95 degrees at 0.74 GHz as well as a gain of 8.9 dB and a phase shift of 98 degrees at 0.88 GHz. This is the first paper to present a dual-band active phase shifter based on band-pass and band-stop designs using dual-band resonators.

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“…They are generally limited to no more than 40 % fractional bandwidth (above this, distributed configurations are used). A modified version of this type phase shifter was also presented in [67]. Sometimes, switching transistors are also integrated into the phase shifter, reducing size and the number of required components [68]- [70].…”

Section: High-pass-low-pass Phase Shiftermentioning

confidence: 99%

Gallium Nitride Phase Shifters

Ross¹

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This thesis presents two different types of high-power gallium nitride (GaN) phase shifters designed for X-band (8-12 GHz) but offering good performance over a much wider band. The first type of phase shifter is a novel design having 22.5°phase shift, which promises wide bandwidth (in this case limited by the SPDT switch also designed), but achieves decent insertion loss (5 dB), good return loss (better than 11 dB) and very low phase variation (1°) across X-band. The components for a 45°differential phase shift using the same structure were also fabricated and verified with measurements. The second type of phase shifter is a 22.5°switched-filter phase shifter which has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (<2 dB), good return loss (>11.15 dB) and an amplitude imbalance of less than 1.03 dB across X-band. The 1 dB compression point was higher than the laboratory equipment was able to measure (>38 dBm) and the phase shifter monolithic microwave integrated circuit (MMIC) exhibited an input-referred thirdii ABSTRACT iii order intercept point (IIP 3 ) higher than 46 dBm. A K-band phase shifter was also designed to test the limits of the technology. The high-power phase shifters have been fabricated in a 0.5 µm GaN HEMT process and were designed using an accurate, customized switch HEMT model. Suspended inductors offering improved quality factor and increased self-resonance frequency were also used in the design of some of the phase shifters.

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Wide-band monolithic phase shifter

Cited by 9 publications

References 4 publications

CMOS phase shifter for conformal phased array beamformer applications

CMOS phase shifter for conformal phased array beamformer applications

A Dual-Band 90-Degree SiGe HBT Active Phase Shifter Based on Band-Pass and Band-Stop Designs Using Dual-Band Resonators

Gallium Nitride Phase Shifters

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