Wide band gap semiconductor technology: State-of-the-art

Shur, M. S.

doi:10.1016/j.sse.2019.03.020

Cited by 45 publications

(18 citation statements)

References 44 publications

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“…Hence, high power density and good temperature resistance is necessary. 86 Wide-bandgap power switching devices (silicon carbide (SiC) and gallium nitride (GaN)) are promising solutions in the automotive sector. They offer a higher thermal conductivity, electric breakdown field, saturated electron drift velocity and lower intrinsic carrier concentration, compared to conventional Si power devices (Table 6).…”

Section: Electric Vehicle Subsystemsmentioning

confidence: 99%

A review on powertrain subsystems and charging technology in battery electric vehicles: Current and future trends

Wagh

Dhatrak

2021

Proceedings of the Institution of Mechanical Engineers, Part D:

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The transport industry is a major contributor to both local pollution and greenhouse gas emissions (GHGs). The key challenge today is to mitigate the adverse impacts on the environment caused by road transportation. The volatile market prices and diminishing supplies of fuel have led to an unprecedented interest in battery electric vehicles (BEVs). In addition, improvements in motor efficiencies and significant advances in battery technology have made it easier for BEVs to compete with internal combustion engine (ICE) vehicles. This paper describes and assesses the latest technologies in different elements of the BEV: powertrain architectures, propulsion and regeneration systems, energy storage systems and charging techniques. The current and future trends of these technologies have been reviewed in detail. Finally, the key issue of electric vehicle component recycling (battery, motor and power electronics) has been discussed. Global emission regulations are pushing the industry towards zero or ultra-low emission vehicles. Thus, by 2025, most cars must have a considerable level of powertrain electrification. As the market share of electric vehicles increases, clear trends have emerged in the development of powertrain systems. However, some significant barriers must be overcome before appreciable market penetration can be achieved. The objective of the current study is to review and provide a complete picture of the current BEV technology and a framework to assist future research in the sector.

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Section: Electric Vehicle Subsystemsmentioning

confidence: 99%

A review on powertrain subsystems and charging technology in battery electric vehicles: Current and future trends

Wagh

Dhatrak

2021

Proceedings of the Institution of Mechanical Engineers, Part D:

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“…The third-generation wide-bandgap semiconductors represented by GaN, SiC, and diamond can meet the requirements of harsh environments, and therefore, they have received increased attention [1][2][3]. However, the dislocation density of wide-bandgap semiconductors can be as high as 10 8 -10 10 cm −2 with a significant impact on electronic mobility and other properties, which seriously hinders their application and development [4,5]. Therefore, it is particularly important to reduce the dislocation density to improve the growth quality of the wide bandgap semiconductor film.…”

Section: Introductionmentioning

confidence: 99%

Multiphoton Absorption Simulation of Sapphire Substrate under the Action of Femtosecond Laser for Larger Density of Pattern-Related Process Windows

Cai

et al. 2021

Micromachines

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It is essential to develop pattern-related process windows on substrate surface for reducing the dislocation density of wide bandgap semiconductor film growth. For extremely high instantaneous intensity and excellent photon absorption rate, femtosecond lasers are currently being increasingly adopted. However, the mechanism of the femtosecond laser developing pattern-related process windows on the substrate remains to be further revealed. In this paper, a model is established based on the Fokker–Planck equation and the two-temperature model (TTM) equation to simulate the ablation of a sapphire substrate under the action of a femtosecond laser. The transient nonlinear evolutions such as free electron density, absorption coefficient, and electron–lattice temperature are obtained. This paper focuses on simulating the multiphoton absorption of sapphire under femtosecond lasers of different wavelengths. The results show that within the range of 400 to 1030 nm, when the wavelength is large, the number of multiphoton required for ionization is larger, and wider and shallower ablation pits can be obtained. When the wavelength is smaller, the number of multiphoton is smaller, narrower and deeper ablation pits can be obtained. Under the simulation conditions presented in this paper, the minimum ablation pit depth can reach 0.11 μm and the minimum radius can reach 0.6 μm. In the range of 400 to 1030 nm, selecting a laser with a shorter wavelength can achieve pattern-related process windows with a smaller diameter, which is beneficial to increase the density of pattern-related process windows on the substrate surface. The simulation is consistent with existing theories and experimental results, and further reveals the transient nonlinear mechanism of the femtosecond laser developing the pattern-related process windows on the sapphire substrate.

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“…The nitride-based semiconductor system, which includes GaN, AlN, InN and its related alloys, has been extensively developed because of its wide range of practical applications, especially in optoelectronic and power devices (Moustakas and Paiella, 2017; Shur, 2019). As the InN possesses a narrow bandgap value at 0.64 eV, the fundamental bandgap of III-V alloy materials such as InGaN can be extended into a broader range of the spectral region (Walukiewicz et al , 2006).…”

Section: Introductionmentioning

confidence: 99%

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Yusof

Hassan

Hamady

et al. 2021

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Purpose The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and the growth process of InGaN/GaN heterostructures. Design/methodology/approach To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 µm undoped-GaN (ud-GaN) and GaN nucleation layer, respectively, over a commercial 2” c-plane flat sapphire substrate. The InGaN layers were grown at different temperature settings ranging from 860°C to 820°C in a step of 20°C. The details of structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Findings InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using the MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of the XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using the Swanepoel method and the FE-SEM cross-section image. Originality/value This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure, which is of interest in solid-state lighting technology, especially in light-emitting diodes and solar cell application.

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Wide band gap semiconductor technology: State-of-the-art

Cited by 45 publications

References 44 publications

A review on powertrain subsystems and charging technology in battery electric vehicles: Current and future trends

A review on powertrain subsystems and charging technology in battery electric vehicles: Current and future trends

Multiphoton Absorption Simulation of Sapphire Substrate under the Action of Femtosecond Laser for Larger Density of Pattern-Related Process Windows

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

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