2015
DOI: 10.1016/j.matlet.2015.03.003
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White light from annealed porous silicon: Broadband emission from violet to the near infrared

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Cited by 4 publications
(1 citation statement)
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“…Since the relaxation of metastable phases occurs through atomic scale rearrangements, formation or annihilation of point defects is expected during this process, leading to changes in photoluminescence spectra. UV irradiation induced evolution of photoluminescence in different materials, such as porous silicon [24], polypyrrole [25] and TiO 2 [26], has been reported. For ZnO, the evolution of the photoluminescence caused by UV irradiation has been reported to occur at cryogenic temperatures [27].…”
Section: Introductionmentioning
confidence: 99%
“…Since the relaxation of metastable phases occurs through atomic scale rearrangements, formation or annihilation of point defects is expected during this process, leading to changes in photoluminescence spectra. UV irradiation induced evolution of photoluminescence in different materials, such as porous silicon [24], polypyrrole [25] and TiO 2 [26], has been reported. For ZnO, the evolution of the photoluminescence caused by UV irradiation has been reported to occur at cryogenic temperatures [27].…”
Section: Introductionmentioning
confidence: 99%