2007
DOI: 10.1063/1.2800797
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White light-emitting diodes based on a single InGaN emission layer

Abstract: White light-emitting InGaN∕GaN diode with an InGaN underlying layer grown on the (0001) sapphire substrate was fabricated by low pressure metal-organic vapor phase epitaxy. The electroluminescence measurements show that the emitted white light is composed of blue and yellow lights, centered at around 440 and 570nm, respectively, for an injection current of 20mA. Cross-sectional transmission electron microscopy reveals that In-rich quantum dots were formed in InGaN wells due to phase separation of indium. It is… Show more

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Cited by 57 publications
(47 citation statements)
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“…The three modes of heteroepitaxy, however, are of great importance not only for Electronics but for Optics as well. Today the SK mode is widely used in the theory and practices of the formation of quantum dots (Figure 3a) [9] and the FM mode-in the quantum wells ( Figure 3b) [10]. A typical example is [11] where the authors evaluate the wetting layer and its temperature dependence in order to determine the optimal conditions for self-assembly of InAs/GaAs quantum dots.…”
Section: The Growth Modes Of Heteroepitaxymentioning
confidence: 99%
See 2 more Smart Citations
“…The three modes of heteroepitaxy, however, are of great importance not only for Electronics but for Optics as well. Today the SK mode is widely used in the theory and practices of the formation of quantum dots (Figure 3a) [9] and the FM mode-in the quantum wells ( Figure 3b) [10]. A typical example is [11] where the authors evaluate the wetting layer and its temperature dependence in order to determine the optimal conditions for self-assembly of InAs/GaAs quantum dots.…”
Section: The Growth Modes Of Heteroepitaxymentioning
confidence: 99%
“…A typical example is [11] where the authors evaluate the wetting layer and its temperature dependence in order to determine the optimal conditions for self-assembly of InAs/GaAs quantum dots. Transmission electron microscopy (TEM) images of: (a) InGaN quantum dots [9] formed within a GaN structure and (b) AlGaN/AlN quantum wells [10], both within an AlN structure. (Reproduced from [9,10] with the permission of AIP Publishing).…”
Section: The Growth Modes Of Heteroepitaxymentioning
confidence: 99%
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“…There are a variety of ways by which white light LEDs are fabricated, among which the colour mixing method and the phosphor down-conversion method are the most commercially viable (ODIA, 2001;IESN TM-16-05, 2005;Schubert & Kim, 2005;Wang et al, 2007;Zhu & Narendran, 2007). In the colour mixing approach to white light, three separate red, green and blue LEDs are combined to form white light.…”
Section: White Light Conversion Efficiencymentioning
confidence: 99%
“…There are broadly two methods of obtaining white light from LEDs; the colour mixing approach where a blue, green and red LEDs are combined either side by side or in a vertically stacked geometry to obtain white light with high colour rendition index and the phosphor down-conversion method, where a blue or ultraviolet (UV) InGaN LED is used to excite phosphors to produce white light (IESN TM-16-05, 2005;Schubert & Kim, 2005;Brittenham & Vittitow, 2006;Wang, et al 2007;Zhu & Narendran, 2007;Azevedo, 2009). …”
Section: Led Lightingmentioning
confidence: 99%