White light-emitting diodes based on quaternary Ag–In-Ga-S quantum dots and their influences on melatonin suppression index

Huang, Gaoxiang; Huang, Yan; Liu, Zilei; Wei, Jiahu; Zhu, Quanshui; Jiang, Guangyu; Jin, Xiao; Li, Qinghua; Li, Feng

doi:10.1016/j.jlumin.2021.117903

Cited by 9 publications

(5 citation statements)

References 54 publications

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“…After shelling with ZnS, the PL lifetime was increased to 31.35 ns, showing that ZnS strongly influences the surface states of AIGS QDs. XRD results confirm the purity of the obtained AIGS QDs, which crystallize in the tetragonal structure of AgInS 2 (average diameter of 2.48 nm)m while core/shell AIGS/ZnS QDs crystallize in the blended cubic form of ZnS (average diameter of 3.8 nm) (Figure 10) [58].…”

Section: Cu-in-ga-se (Cigse) and Cu-in-ga-se-s (Cigsse) Qdssupporting

confidence: 53%

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

Shishodia,

Chouchene,

Gries

et al. 2023

Nanomaterials

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I–III–VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of QDs has become the mainstream light-harvesting material in QDSSCs due to the ability to tune their electronic properties through size, shape, and composition and the ability to assemble the nanocrystals on the surface of TiO2. Moreover, these nanocrystals can be produced relatively easily via cost-effective solution-based synthetic methods and are composed of low-toxicity elements, which favors their integration into the market. This review describes the methods developed to prepare I-III-VI2 QDs (AgInS2 and CuInS2 were excluded) and control their optoelectronic properties to favor their integration into QDSSCs. Strategies developed to broaden the optoelectronic response and decrease the surface-defect states of QDs in order to promote the fast electron injection from QDs into TiO2 and achieve highly efficient QDSSCs will be described. Results show that heterostructures obtained after the sensitization of TiO2 with I-III-VI2 QDs could outperform those of other QDSSCs. The highest power-conversion efficiency (15.2%) was obtained for quinary Cu-In-Zn-Se-S QDs, along with a short-circuit density (JSC) of 26.30 mA·cm−2, an open-circuit voltage (VOC) of 802 mV and a fill factor (FF) of 71%.

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Section: Cu-in-ga-se (Cigse) and Cu-in-ga-se-s (Cigsse) Qdssupporting

confidence: 53%

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

Shishodia,

Chouchene,

Gries

et al. 2023

Nanomaterials

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“…The obtained results demonstrate the successful preparation of the AIGS-QDs. 36,37 To evaluate AIGS-QDs quality, the transmission electron microscope (TEM) and high-resolution transmission electron microscope (HRTEM) was utilized to analyze the microstructure and atomic arrangement, as shown in Fig. S3 † and 1b.…”

Section: Resultsmentioning

confidence: 99%

High-sensitivity hybrid MoSe₂/AgInGaS quantum dot heterojunction photodetector

Zhao,

Wang,

Jia

et al. 2024

RSC Adv.

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“…53 Besides, due to different chemical activity at a same temperature, the PL of AIGS QDs is nonlinearly consistent with the feed ratio of In 3+ /Ga 3+ , leading to an uneven element distribution. 54,55 It worth noting that Ga 3+ can effectively passivate the shallow defect energy level and weaken the DAP process, which may be the origination of narrow FWHM of Ga 3+ doped ZAIGS QDs. 27 Although Ga 3+ has low chemical activity and a relatively slow incorporation rate into the lattice, the selection of suitable Ga 3+ and S 2− source (e.g., Ga(DDTC) 3 and DMTU) and higher temperature can be a proper solution.…”

Section: ■ Synthesis and Optical Propertiesmentioning

confidence: 99%

“…Similarly, varying the content of Ga 3+ , In 3+ , Ag + , or S 2– can adjust the wavelength from 630 to 485 nm and further expand the coverage of emission toward shorter wavelength by Zn 2+ -doping. , Yang et al achieved a blue I–III–VI derivative QDs by regulating the doping amount of Zn 2+ (Z 1.0 AGS/ZnS), thus making the PL blue-shifted to 450 nm, accompanied by a PLQY of 64% (Figure b,c) . Besides, due to different chemical activity at a same temperature, the PL of AIGS QDs is nonlinearly consistent with the feed ratio of In 3+ /Ga 3+ , leading to an uneven element distribution. , It worth noting that Ga 3+ can effectively passivate the shallow defect energy level and weaken the DAP process, which may be the origination of narrow FWHM of Ga 3+ doped ZAIGS QDs . Although Ga 3+ has low chemical activity and a relatively slow incorporation rate into the lattice, the selection of suitable Ga 3+ and S 2– source (e.g., Ga(DDTC) 3 and DMTU) and higher temperature can be a proper solution. , Simultaneously, Zn 2+ -doping is reported as an efficient strategy in reducing the concentration of cation vacancy (V In , V Ga ), which can in turn eliminate nonradiative recombination center and improve PLQY.…”

Section: Synthesis and Optical Propertiesmentioning

confidence: 99%

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

et al. 2023

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Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I− III−VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I−III−VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I−III−VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

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White light-emitting diodes based on quaternary Ag–In-Ga-S quantum dots and their influences on melatonin suppression index

Cited by 9 publications

References 54 publications

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

High-sensitivity hybrid MoSe₂/AgInGaS quantum dot heterojunction photodetector

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

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White light-emitting diodes based on quaternary Ag–In-Ga-S quantum dots and their influences on melatonin suppression index

Cited by 9 publications

References 54 publications

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

High-sensitivity hybrid MoSe2/AgInGaS quantum dot heterojunction photodetector

I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

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High-sensitivity hybrid MoSe₂/AgInGaS quantum dot heterojunction photodetector