White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Song, Kiwon; Kim, Do Hyun; Kim, Jong Min; Cho, Chu Young; Choi, Jeongmin; Kim, Kahee; Park, Jinsub; Kim, Hogyoug

doi:10.1088/1361-6528/aa6fdd

Cited by 12 publications

(10 citation statements)

References 32 publications

(34 reference statements)

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“…6(b,c,d). Emissions with shorter wavelengths were measured from the facets in order of {1122}, {1101}, and (0001), in good agreement with the results in the literature [42][43][44][45] . The emissions with various wavelengths were attributed to the differences in growth rates and indium incorporation on each facet 45,46 .…”

Section: Resultssupporting

confidence: 87%

A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes

Lee

Kim

et al. 2020

Sci Rep

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A discrete core-shell-like micro-light-emitting diode (micro-LED) array was grown on a 100 nm-thick sapphire nano-membrane array without harmful plasma etching for chip singulation. Due to proper design for the sapphire nano-membrane array, an array of multi-faceted micro-LEDs with size of 4 μm × 16 μm was grown. threading dislocation density in the micro-LeD formed on sapphire nano-membrane was reduced by 59.6% due to the sapphire nano-membranes, which serve as compliant substrates, compared to GaN formed on a planar substrate. Enhancements in internal quantum efficiency by 44% and 3.3 times higher photoluminescence intensity were also observed from it. Cathodoluminescence emission at 435 nm was measured from c-plane multiple quantum wells (MQWs), whereas negligible emissions were detected from semi-polar sidewall facets. A core-shell-like MQWs were formed on all facets, hopefully lowering concentration of non-radiative surface recombination centers and reducing leakage current paths. This study provides an attractive platform for micro-LEDs by using sapphire nano-membrane.

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Section: Resultssupporting

confidence: 87%

A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes

Lee

Kim

et al. 2020

Sci Rep

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“…When the growth temperature was 1240 °C, the AlGaN nanorods with semi-polar surfaces were observed, as illustrated in Figure 4a. According to previous reports, the as-grown face planes with the slowest growth rate determined the final morphology of the crystal [29]. Thereby, these vertically aligned AlGaN nanorods implied that the growth rate of {1-101} planes was slower than In addition, the histograms and corresponding vertical-to-lateral aspect ratio distribution images of the AlGaN nanorods can be shown from Figure 3d-g. With a decrease in the NH 3 flow rate, the vertical-to-lateral aspect ratio became higher.…”

Section: Effect Of Reaction Temperature On Algan Nanorodssupporting

confidence: 65%

“…When the growth temperature was 1240 • C, the AlGaN nanorods with semi-polar surfaces were observed, as illustrated in Figure 4a. According to previous reports, the as-grown face planes with the slowest growth rate determined the final morphology of the crystal [29]. Thereby, these vertically aligned AlGaN nanorods implied that the growth rate of {1-101} planes was slower than that of the c-plane.…”

Section: Effect Of Reaction Temperature On Algan Nanorodsmentioning

confidence: 65%

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Song

Ren

Wang³

et al. 2020

Crystals

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The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO2 substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned c-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics.

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“…We grew the UV-A LED epi-structures on a 2-in, c-plane (0001) Al 2 O 3 (sapphire) substrate using an Aixtron 2600 G3HT metal organic chemical vapor deposition (MOCVD) system (Aixtron, Herzogenrath, Aachen, Germany) [11]. The epi-structures consist of a 200-nm thick GaN buffer layer, a 4-µm thick unintentionally doped GaN layer, a 3-µm thick Si-doped GaN layer, 3 pairs of 2-6-nm thick Si-doped In 0.01 Ga 0.99 N/GaN interlayers (ILs), 3 pairs of 3-12-nm-thick In 0.01 Ga 0.99 N/GaN EELs, 6 periods of InGaN/GaN/AlGaN MGWs, and 150-nm thick Mg-doped GaN layer.…”

Section: Methodsmentioning

confidence: 99%

Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

et al. 2020

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In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active layer. The growth behavior of GaN with triethyl Ga (TEGa) showed an increasing growth time due to a lower growth rate compared with GaN grown with trimethyl Ga (TMGa), resulting in the formation of columnar domains and grain boundary with reduced defect. UV-A light emitting diode (LED) chips with three types of ILs and EELs, grown with different MO sources, were fabricated and evaluated by light output power (LOP) measurements. The LOP intensity of UVLED-III with the GaN barrier layer-based IL and EEL grown by TEGa was enhanced by 1.5 times compared to that of the IL and EEL grown with TMGa at 300 mA current injection. Use of the GaN barrier layer in ILs and EELs grown by TEGa improved the crystal quality of the post grown InGaN/GaN multiple quantum well, which reduces leakage current. Therefore, for the UV-A LED with ILs and EELs grown with TEGa MO precursors, electrical and optical properties were improved significantly.

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White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Cited by 12 publications

References 32 publications

A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes

A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

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