White light emission from nano-fibrous ZnO thin films/porous silicon nanocomposite

Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an Al x Ga1−x N epitaxial layer

“…[12] Using d-spacing values, the a and c lattice parameters of the Al x Ga 1-x N epilayers were calculated using the Jade 6.5 software package developed by Materials Data Inc. based on the XRD measurement results; the parameters are summarized in Table 1. The lattice parameters, i.e., a, c, and c/a ratios, and internal parameter u, which is defined as u = a 2 / (3c 2 ) + 0.25, [13] were calculated for the Al x Ga 1-x N epilayers based on the XRD measurement results and are summarized in Table 1. For an ideal wurtzite geometry, the u and c/a ratio values should be 0.375 and 1.633, respectively.…”

Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method

“…Several methods such as molecular beam epitaxy (MBE) [21], pulsed laser deposition (PLD) [22], atomic layer deposition (ALD) [23], radio frequency (RF) magnetron sputtering [24], chemical vapor deposition (CVD) [25], hydrothermal method [26], sol-gel spin-coating [27], and sol-gel dip-coating [28] have been used to grow ZnO thin films. The sol-gel method, which is simple and inexpensive, can be used to coat ZnO thin films onto various surfaces at RT [29] and cover large areas [30].…”

Study of lattice deformation and atomic bond length for AlxGa1−xN epi-layers with synchrotron radiation X-ray absorption spectroscopy

“…For an ideal wurtzite geometry u (c/a ratio) should be 0.375 (1.633), where u = a 2 / (3c 2 ) ? 0.25 [17]. In Fig.…”