Whisker growth from vacuum evaporated submicron Sn thin films

Illés, Béla; Skwarek, Agata; Batorfi, Reka; Ratajczak, J.; Czerwiński, A.; Krammer, Olivér; Medgyes, Bálint; Horváth, Barbara; Hurtony, Tamás

doi:10.1016/j.surfcoat.2017.01.011

Cited by 14 publications

(18 citation statements)

References 33 publications

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“…42,49,51,70,71 Sn / Sn 2+ + 2e . Additionally, the direct oxidation of Sn to Sn(OH) 4 could also occur at the anode surface, which is preferred as the pH increases towards the neutral side, 42 as described in reaction (7).…”

Section: Reactions At the Anodementioning

confidence: 99%

“…Besides the electrochemical reactions mentioned above, it is also possible that an additional chemical reaction, the hydrolysis of Sn 4+ occurs and forms precipitate Sn(OH) 4 at the anode surface:…”

Section: 115mentioning

confidence: 99%

“…On the other hand, the direct oxidation of tin to Sn(OH) 4 and the hydrolysis of Sn 4+ as respectively described in reactions (7) and (10) will also contribute to a part of the total amount of precipitates. The formed Sn(OH) 4 and Sn(OH) 2 can also be respectively dehydrated to SnO 2 and SnO which are thermodynamically stable, as described by reactions (18) depending upon the composition of solder alloys and the type of contaminants in the electrolyte layer.…”

Section: -118mentioning

confidence: 99%

“…The formed Sn(OH) 4 and Sn(OH) 2 can also be respectively dehydrated to SnO 2 and SnO which are thermodynamically stable, as described by reactions (18) depending upon the composition of solder alloys and the type of contaminants in the electrolyte layer.…”

Section: -118mentioning

confidence: 99%

“…This is a reverse phenomenon in contrast to that in chloride-containing solution and pure water. It was believed that Pb was protected from corrosion attack in sulfate by forming an insoluble layer of PbSO 4 or PbO. 63 The extremely low solubility of PbSO 4 (see Table 2) and the insoluble property of PbO are favorable for the formation of an insoluble layer on the solder alloys surface.…”

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confidence: 99%

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Electrochemical migration of Sn and Sn solder alloys: a review

et al. 2017

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Sn and Sn solder alloys in microelectronics are the most susceptible to suffer from electrochemical migration (ECM) which significantly compromises the reliability of electronics. This topic has attracted more and more attention from researchers since the miniaturization of electronics and the explosive increase in their usage have largely increased the risk of ECM. This article first presents an introductory overview of the ECM basic processes including electrolyte layer formation, dissolution of metal, ion transport and deposition of metal ions. Then, the article provides the major development in the field of ECM of Sn and Sn solder alloys in recent decades, including the recent advances and discoveries, current debates and significant gaps. The reactions at the anode and cathode, the mechanisms of precipitates formation and dendrites growth are summarized. The influencing factors including alloy elements (Pb, Ag, Cu, Zn, etc.), contaminants (chlorides, sulfates, flux residues, etc.) and electric field (bias voltage and spacing) on the ECM of Sn and Sn alloys are highlighted. In addition, the possible strategies such as alloy elements, inhibitor and pulsed or AC voltage for the inhibition of the ECM of Sn and Sn solder alloys have also been reviewed.

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Section: Reactions At the Anodementioning

confidence: 99%

Section: 115mentioning

confidence: 99%

Section: -118mentioning

confidence: 99%

Section: -118mentioning

confidence: 99%

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confidence: 99%

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Electrochemical migration of Sn and Sn solder alloys: a review

et al. 2017

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Vacuum Arc Plasma Sources. Thin Film Deposition

Beilis

2020

Plasma and Spot Phenomena in Electrical Arcs

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Kinetics of Sn whisker growth from Sn thin-films on Cu substrate

Illés

Krammer

Hurtony

et al. 2020

J Mater Sci: Mater Electron

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The kinetics of Sn whisker growth was investigated on vacuum-evaporated Sn thin-films. Sn film layers were deposited on a Cu substrate with 0.5 and 1 µm thicknesses. The samples were stored in room conditions (22 ± 1 °C/50 ± 5RH%) for 60 days. The Sn whiskers and the Cu–Sn layer structure underneath them were investigated with both scanning electron and ion microscopy. Fast Cu–Sn intermetallic formation resulted in considerable mechanical stress in the Sn layer, which initiated intensive whisker growth right after the layer deposition. The thinner Sn layer produced twice many whiskers compared to the thicker one. The lengths of the filament-type whiskers were similar, but the growth characteristics differed. The thinner Sn layer performed the highest whisker growth rates during the first 7 days, while the thicker Sn layer increased the growth rate only after 7 days. This phenomenon was explained by the cross-correlation of the stress relaxation ability of Sn layers and the amount of Sn atoms for whisker growth. The very high filament whisker growth rates might be caused by the interface flow mechanism, which could be initiated by the intermetallic layer growth itself. Furthermore, a correlation was found between the type of the whiskers and the morphology of the intermetallic layer underneath.

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Whisker growth from vacuum evaporated submicron Sn thin films

Cited by 14 publications

References 33 publications

Electrochemical migration of Sn and Sn solder alloys: a review

Electrochemical migration of Sn and Sn solder alloys: a review

Vacuum Arc Plasma Sources. Thin Film Deposition

Kinetics of Sn whisker growth from Sn thin-films on Cu substrate

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