“…The theory is compared to the Japanese Space Flyer Unit High-Voltage Solar Array ground experiment and shown to give a reasonable explanation for data relating the arcing rate to the solar array temperature. 6 x 10 4 -52^1/2 /0 w , A/V 2 =6.53x 10 9 </>J; 5 , V/m -field enhancement factor induced by ion current = mean speed of gas, m/s = thickness of dielectric material d\ + d 2 , m = thickness of co verglass, m = thickness of adhesive, m = electric field, V/m = initial conductor (cathode) electric field, V/m -desorption energy, eV = electron incident energy, eV = electron incident energy for maximum secondary electron yield, eV = secondary electron emission energy, eV -electron incident energy to give secondary electron yield unity, eV = electric field parallel to dielectric side surface, V/m = electric field perpendicular to dielectric side surface, V/m = total current, A = current per unit length in the direction parallel to dielectric side surface, A/m -current per unit length in the direction perpendicular to dielectric side surface, A/m = incident electron current density to dielectric surface, A/m 2 = quasisteady incident electron current density to dielectric surface, A/m 2 = prebreakdown current density from conductor (cathode) before ionization begins, A/m 2 = enhanced field electron emission current density from conductor surface, A/m 2 = quasisteady current density due to negative space charge, A/m 2 = ion current density to conductor due to ionization of neutral, A/m 2 Received Jan. 18,1992; revision received Sept. 16,1992; accepted for publication Sept. 26, 1992 = desorption rate coefficient, s -1 = particle mass, kg = number of gas particles adsorbed per unit area, m~2 = adsorbed neutral surface density for monolayer coverage, m~2 = neutral density, m~3 = ambient neutral density, m~3 = critical neutral density for arcing onset, m~3 = pressure, Torr = particle charge, C = electron impact desorption cross section, m~2 = emission area at metal-dielectric interface, m 2 = emission area at dielectric-vacuum interface, m 2 = sticking probability of neutral particle to dielectric surface = temperature, K = neutral temperature, K = surface temperature, K = bias voltage, V .…”