When Nanowires Meet Ultrahigh Ferroelectric Field–High-Performance Full-Depleted Nanowire Photodetectors

Abstract

One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 × 10(5), responsivity of 2.8 × 10(5) A W(-1), and specific detectivity (D*) of 9.1 × 10(15) Jones at λ = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 × 10(7), responsivity of 5.2 × 10(6) A W(-1) and D* up to 1.7 × 10(18) Jones at λ = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.

Photogating in Low Dimensional Photodetectors

“…Responsivity and response time of part current state‐of‐the‐art low dimensional photodetectors 17, 31, 32, 39, 40, 44, 47, 67, 99, 100, 101, 102, 103, 104. The blue line represents a typical magnitude order of GBP for traditional high‐performance thin‐film photodetectors.…”

Two-Dimensional Modeling of Silicon Nanowires Radial Core-Shell Solar Cells

“…Due to limited dimension and large surface-to-volume ratio, nanowires devices are more likely to exhibit unique properties especially for high performance photoelectric devices [4,5]. The performance is mostly affected by several issues such as lattice quality and electrode contact [6,7].…”

1D/2D material-based photodetectors driven by ferroelectrics

“…Recently, ferroelectric FETs have been used for improving the performance of 1D/2D material-based photodetectors. For example, the researchers [10][11][12][13] from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, have successfully combined several ferroelectric materials with 1D/2D materials to form field effect transistor-based photodetectors. Among these photodetectors, the poly(vinylidene fluoride-trifluoroethylene) (PVDF) was employed as the gate dielectric materials because of its excel-*Corresponding author (email: luolb@hfut.edu.cn) lent ferroelectricity and light transmission properties.…”

“…Among these photodetectors, the poly(vinylidene fluoride-trifluoroethylene) (PVDF) was employed as the gate dielectric materials because of its excel-*Corresponding author (email: luolb@hfut.edu.cn) lent ferroelectricity and light transmission properties. The stable remnant polarization of PVDF after polarization, can provide an ultrahigh local electrostatic field (≈10 9 V/m) onto the semiconducting channel which is much stronger than that produced by additional gate bias in FETs [10][11][12][13]. With the positive or negative direction of remnant polarization electrostatic field in PVDF, the 1D/2D materials channel can be maintained in fully depleted or accumulated state.…”

“…In addition to photodetectors made of 2D materials, the deposition of ferroelectric materials is beneficial for improving the device performance of 1D semiconductor nanostructures as well [10,11]. For instance, Hu et al assemble highly sensitive side-gated phototransistors.…”