What is Electrical Overstress? - Analysis and Conclusions

Kaschani, K.T.

doi:10.1016/j.microrel.2015.03.003

Cited by 4 publications

(1 citation statement)

References 92 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This kind of failures typically arises from electrical overstress events, namely, EOSs. [ 25,134 ] Generally speaking, an EOS event represents a temporary bias condition during which the maximum electrical ratings of the LED are exceeded. During this time frame, which can last from tenths or hundreds of ns, as in the case of electrostatic discharges (ESDs), [ 135 ] to several ms, [ 25 ] the excess energy and/or power released in overstress condition can induce a sudden drop in the optical performance of the device, limit its long‐term reliability, [ 136 ] and even induce its immediate failure.…”

Section: Degradation Processes Of Gan Ledsmentioning

confidence: 99%

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

Buffolo

Caria

Piva

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)-based light-emitting diodes (LEDs) are reviewed. An overview of the defects characterization techniques most relevant for wide-bandgap diodes is provided first. Then, by introducing a catalogue of traps and deep levels in GaN and computer-aided simulations, it is shown which types of defects are more detrimental for the radiative efficiency of the devices. Gradual degradation mechanisms are analyzed in terms of their specific driving force: a separate analysis of recombination-enhanced processes, driven by nonradiative recombination and/or temperature-assisted processes, such as defects or impurity diffusion, is presented. The most common lifetime estimation methods and standards adopted for solid-state luminaires are also reported on. Finally, the paper concludes by examining which are the typical degradation and failure mechanisms exhibited by LEDs submitted to electrical overstress.

show abstract

Section: Degradation Processes Of Gan Ledsmentioning

confidence: 99%