What Can Be Expected from High-Z Semiconductor Detectors?

Armantrout, G.A.; Swierkowski, S. P.; Sherohman, J.W.; Yee, Jick H.

doi:10.1109/tns.1977.4328653

Cited by 89 publications

(23 citation statements)

References 20 publications

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“…For gamma radiation detection, AlSb is particularly promising as a novel material enabling high energy-resolution detection at room temperature due to its indirect band gap of 1.6 eV, the high atomic number of Sb, and the potentially high electron and hole mobilities of up to several hundred cm 2 V −1 s −1 at room temperature. 1,2 Improved materials for high resolution, room temperature gamma radiation detectors are critically needed for applications in nuclear nonproliferation and monitoring, homeland security, and also medical and space imaging applications. Such detectors operate by counting the number of electronhole pairs created in the semiconductor upon interaction with a gamma ray.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic point defects in aluminum antimonide

et al. 2008

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Calculations within density functional theory on the basis of the local density approximation are carried out to study the properties of intrinsic point defects in aluminum antimonide. Special care is taken to address finite-size effects, band gap error, and symmetry reduction in the defect structures. The correction of the band gap is based on a set of GW calculations. The most important defects are identified to be the aluminum interstitial Al 1+ i,Al , the antimony antisites Sb 0 Al and Sb 1+ Al , and the aluminum vacancy V 3− Al . The intrinsic defect and charge carrier concentrations in the impurity-free material are calculated by self-consistently solving the charge neutrality equation. The impurity-free material is found to be n-type conducting at finite temperatures.

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Section: Introductionmentioning

confidence: 99%

Intrinsic point defects in aluminum antimonide

et al. 2008

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“…Binary and ternary compounds of group III-V and II-VI are of immediate concern when we look for alternatives. AlSb a group III-V binary compound is one of the most suitable alternatives for thin film solar cells fabrication because of its suitable optical and electrical properties (Armantrout et al, 1977). The crystalline AlSb film has theoretical conversion efficiency more than 27% as suggested in literature (Zheng et al, 2009).…”

Section: Thin Film Solar Cellsmentioning

confidence: 99%

AlSb Compound Semiconductor as Absorber Layer in Thin Film Solar Cells

Dhakal¹,

Huh²,

Galipeau³

et al. 2011

Solar Cells - New Aspects and Solutions

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“…The problem of developing such a detector is essentially a materials issue. 1,2 The use of semiconductors for the active material is particularly attractive, due to the wide spectrum of properties available and the ability to tune the properties over large ranges by, e.g., doping, alloying, and thermal treatment. Several materials parameters are critical for the development of a gamma radiation detector that operates with high energy resolution at room temperature.…”

Section: Introductionmentioning

confidence: 99%

First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

et al. 2007

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The development of high resolution, room temperature semiconductor radiation detectors requires the introduction of materials with increased carrier mobility-lifetime (µτ ) product, while having a band gap in the 1.4-2.2 eV range. AlSb is a promising material for this application. However, systematic improvements in the material quality are necessary to achieve an adequate µτ product. We are using a combination of simulation and experiment to develop a fundamental understanding of the factors which affect detector material quality. First principles calculations are used to study the microscopic mechanisms of mobility degradation from point defects and to calculate the intrinsic limit of mobility from phonon scattering. We use density functional theory (DFT) to calculate the formation energies of native and impurity point defects, to determine their equilibrium concentrations as a function of temperature and charge state. Perturbation theory via the Born approximation is coupled with Boltzmann transport theory to calculate the contribution toward mobility degradation of each type of point defect, using DFT-computed carrier scattering rates. A comparison is made to measured carrier concentrations and mobilities from AlSb crystals grown in our lab. We find our predictions in good quantitative agreement with experiment, allowing optimized annealing conditions to be deduced. A major result is the determination of oxygen impurity as a severe mobility killer, despite the ability of oxygen to compensation dope AlSb and reduce the net carrier concentration. In this case, increased resistivity is not a good indicator of improved material performance, due to the concomitant sharp reduction in µτ .

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What Can Be Expected from High-Z Semiconductor Detectors?

Cited by 89 publications

References 20 publications

Intrinsic point defects in aluminum antimonide

Intrinsic point defects in aluminum antimonide

AlSb Compound Semiconductor as Absorber Layer in Thin Film Solar Cells

First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

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