Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

Zhang, Hongyi; Chen, Yonghai; Zhou, Guanyu; Tang, C. G.; Wang, Zhanguo

doi:10.1186/1556-276x-7-600

Cited by 32 publications

(16 citation statements)

References 34 publications

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“…Recently, many investigations have addressed the fabrication, characterization, and exploitation of selfassembled InAs/GaAs quantum dot (QD) structures due to their unique properties as well as their great potential for various optoelectronic devices [1][2][3][4][5][6][7][8]. In particular, the quantum coupled InAs/GaAs QD pair structures provide an approach to fabricate artificial QD molecules for implementing quantum computation schemes [9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Liu¹,

Liang²,

Guo³

et al. 2016

Nano Online

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The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al 0.5 Ga 0.5 As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al 0.5 Ga 0.5 As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.

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Section: Introductionmentioning

confidence: 99%

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Liu¹,

Liang²,

Guo³

et al. 2016

Nano Online

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“…The energy stored in the strained layer causes the formation of quantum dots to ensure the relaxation of the system. The thickness of the wetting layer and its value critical for the quantum dot formation are known to decrease with either increasing temperature or the degree of lattice mismatch corresponding to the energy in the layer . There are no stresses in the case of DE since the supersaturated vapor transforms into the liquid phase on the substrate at temperatures typical of such type of epitaxy.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Hybrid Analytical–Monte Carlo Model of In/GaAs(001) Droplet Epitaxy: Theory and Experiment

Balakirev

Солодовник

Агеев

2018

Physica Status Solidi (b)

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We study the droplet epitaxy of indium on the As‐stabilized GaAs(001) substrate using the analytical theory of nucleation combined with kinetic Monte Carlo simulations. The developed model allows considering the atomistic processes of nucleation and growth of droplets without strict binding to the zinc blende structure. We assume that the formation of stable droplets results from the alternation of the processes of assembly and disassembly of subcritical islands. We use a concept of nonmonotonic dynamics of critical size and supersaturation to explain the physical processes on the surface. The thickness of the indium wetting layer exceeds a value of one monolayer and increases gradually with decreasing temperature, which is due to the long‐range interaction of indium with the GaAs substrate. The simulation results are in good agreement with the experiments in a wide range of growth temperatures.

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“…Today the SK mode is widely used in the theory and practices of the formation of quantum dots (Figure 3a) [9] and the FM mode-in the quantum wells ( Figure 3b) [10]. A typical example is [11] where the authors evaluate the wetting layer and its temperature dependence in order to determine the optimal conditions for self-assembly of InAs/GaAs quantum dots. Transmission electron microscopy (TEM) images of: (a) InGaN quantum dots [9] formed within a GaN structure and (b) AlGaN/AlN quantum wells [10], both within an AlN structure.…”

Section: The Growth Modes Of Heteroepitaxymentioning

confidence: 99%

“…Finally, the GaP layer is finished, as we expected [90], with an extremely smooth top surface (RMS within 1 nm in a 1 µm × 1 µm AFM image) with the typical features for 2D growth (Figure 37f). After all these considerations the expected scenario is: the first several (10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) monoatomic layers of pseudomorphous growth should form a high quality dislocation-free area [85,88] (see also Figure 33), followed by a several µm thick area which should be heavily populated with dislocations that are a result of the release of the strain built during the pseudomorphous growth. With thickness increase a reduction of the dislocation density is expected.…”

Section: Some Considerations On Heteroepitaxy Of Op Nonlinear Opticalmentioning

confidence: 99%

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Tassev

2017

Crystals

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Advances in Electronics and Optics are often preceded by discoveries in Crystal Growth theory and practice. This article represents in retrospect some of the most significant contributions of heteroepitaxy in these and some other areas-the strong impact of the three modes of heteroepitaxy on microelectronics and quantum optics, the big "push" of PENDEO epitaxy in development of Light Emitting Diodes, etc. A large part of the text is dedicated to heteroepitaxy of nonlinear optical materials grown on orientation-patterned templates and used in the development of new quasi-phase-matching frequency conversion laser sources. By achieving new frequency ranges such sources will result in a wide variety of applications in areas such as defense, security, industry, medicine, and science. Interesting facts from the scientific life of major contributors in the field are mixed in the text with fine details from growth experiments, chemical equations, results from material characterizations and some optical and crystallographic considerations-all these presented in a popular way but without neglecting their scientific importance and depth. The truth is that often heteroepitaxy is not just the better but the only available option. The truth is that delays in device development are usually due to gaps in materials research. In all this, miscommunication between different scientific communities always costs vain efforts, uncertainty, and years of going in a wrong scientific direction. With this article we aim to stimulate a constructive dialog that could lead to solutions of important interdisciplinary scientific and technical issues.

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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

Cited by 32 publications

References 34 publications

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Hybrid Analytical–Monte Carlo Model of In/GaAs(001) Droplet Epitaxy: Theory and Experiment

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

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