Wettability of silicon carbide by gold, germanium and silicon

Li, J. G.; Hausner, H.H.

doi:10.1007/bf00720944

Cited by 35 publications

(9 citation statements)

References 2 publications

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“…This value agreed reasonably well with the results reported by Whalen and Anderson [5] (40 ± 5 deg in vacuum at 1750 K (1477°C)), Naidich et al [6] (36 deg in vacuum at 1750 K (1477°C)), and Yupko and Gnesin [7] (33 to 37 deg in vacuum at 1720 K (1447°C)). A similar value for the contact angle was reported by Li and Hausner [8,9] (38 deg at 1703 K (1430°C)).…”

Section: Introductionsupporting

confidence: 82%

Initial Wetting and Spreading Rates Between SiC and CaO-SiO2-MnO Slag

Park

Jeon

Lee

et al. 2016

Metall Mater Trans B

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The wetting of CaO-SiO 2 -MnO slag on silicon carbide was studied with a variety of slag compositions at 1823 K (1550°C). Wetting experiments were performed by the dispensed drop technique. We observed complete wetting of the slag on SiC (within 1 second) without a bubble reaction regardless of the basicity (=CaO/SiO 2 = C/S ratio). However, after 8 seconds, the bubble reaction was observed under conditions of C/S = 0.8 and 1.1, whereas it was not observed at temperatures lower than 1823 K (1550°C). The contact angle was independent of MnO content, while the spreading rate increased with the increasing MnO content at the early stage of wetting. Inertial force acts on the early stage of spreading, and viscous force acts with lower MnO content due to higher viscosity. The low-viscosity slag did not fit with the nonreactive viscous model. However, the high-viscosity slag fitted the model well.

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Section: Introductionsupporting

confidence: 82%

Initial Wetting and Spreading Rates Between SiC and CaO-SiO2-MnO Slag

Park

Jeon

Lee

et al. 2016

Metall Mater Trans B

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“…Smaller pore size filters, therefore, should be used. Mean filter pore diameter, D = 2R, (d g , d max ) 0.00206/m [6] Mean filter window diameter, d w , (d c ) 0.00093/m [6] Mean filter branch diameter, d b (1/10 of D) 0.00020/m Mean pore height, l 0.00184/m Filter depth, H 0.026/m Porosity of 30 ppi CFF, e 0.88 [6] Surface tension of molten Si, r lg 0.80/J m À2 [17] Wetting angle of Si(l) on SiC(s),h (cos h) 3 8°(0.79) [18] Fig. 6-The boundary layer (lighted shaded area) with a thickness d described by Eq.…”

Section: Discussionmentioning

confidence: 99%

A Model of Foam Filters

Ciftja

Engh

Tangstad

2009

Metall Mater Trans B

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Filtration with foam filters is reported as a successful method to remove inclusions from top-cut silicon scrap. Inclusions in top-cut silicon scrap are needle-like Si 3 N 4 particles and round SiC inclusions. A high filtration efficiency of more than 99 pct for 30-ppi SiC filters is achieved. The inclusions that remain are mainly SiC particles smaller than 10 lm. Possibly these particles are primarily secondary inclusions. The filtration efficiency increases with decreasing filter pore size. The main factor that plays a role in deep-bed filtration seems to be interception. Various models are considered to estimate the removal efficiency of foam filters by this mechanism. Here, we propose a new model called ''the branch'' model. This model gives a high filtration efficiency and agrees the best with the experimental results.

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“…The wetting behavior of carbon and silicon carbide with silicon has been reported by a number of authors [12][13][14][15]. The contact angle of silicon on silicon carbide was reported to be 38° at 1430 °C [13]. Using the values of surface tension at this temperature, the work of adhesion is calculated to be 1311 mJm-2 for the Si-SiC system at 1430 °C.…”

Section: Introductionmentioning

confidence: 96%

“…The rate of infiltration depends on the wetting of the preform by the melt, which generally increases with increasing infiltration temperature. The wetting behavior of carbon and silicon carbide with silicon has been reported by a number of authors [12][13][14][15]. The contact angle of silicon on silicon carbide was reported to be 38° at 1430 °C [13].…”

Section: Introductionmentioning

confidence: 99%