Wet Resist Strip Capability vs. Implant Energy

Christenson, K. K.

doi:10.1149/1.2779379

Cited by 15 publications

(5 citation statements)

References 1 publication

(1 reference statement)

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“…As a result, large amounts of chemicals, such as H 2 SO 4 , H 2 O 2 , HCl, NH 4 OH, and amine solvents, are required in wet cleaning processes. , For safety and environmental reasons, the use of ozonized water is attracting attention as a viable method for removing organic contaminants, which have been conventionally removed by a high-temperature sulfuric acid–hydrogen peroxide mixture (SPM). − In terms of applications to semiconductor manufacturing, ozonized water cleaning systems are strongly desired as they provide enhanced removal rates for organic contaminants. In addition, the challenge to the amorphous carbon-like damage layer created by ion-implant doses greater than 5E14/cm 2 is significantly important to introduce the ozone cleaning method in the semiconductor manufacturing processes. − …”

Section: Introductionmentioning

confidence: 99%

Effect of Microbubbles on Ozonized Water for Photoresist Removal

Takahashi

Ishikawa²,

Asano³

et al. 2012

J. Phys. Chem. C

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In this paper, we describe the use of ozone microbubbles in photoresist removal from silicon wafers. Ozonized water has attracted much attention as an environmental friendly cleaning method in semiconductor manufacturing. However, it would be desirable to enhance the oxidative ability of ozonized water for practical application. The existence of microbubbles in ozonized water has been shown to significantly enhance the photoresist removal rate due to an elevated dissolved ozone concentration (approximately 2.5 times that of ordinary ozone bubbling) and a direct effect of the microbubbles (removal rate is approximately 1.3 times faster than water with the same concentration of dissolved ozone without microbubbles). Additionally, the ozone microbubble solution was able to effectively remove a high-dose ion-implanted photoresist, which is extremely resistant to removal by ozonized water and other wet chemicals because of its amorphous carbon-like layer, or “crust”. Electron spin resonance experiments were also performed without the influence of serious metal contamination and indicated the presence of hydroxyl radicals, which are thought to be formed by interaction of ozone with hydroxide ions adsorbed at the gas–water interface upon collapse of the microbubbles. The hydroxyl radicals play an important role in photoresist removal by the ozone microbubble treatment.

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Section: Introductionmentioning

confidence: 99%

Effect of Microbubbles on Ozonized Water for Photoresist Removal

Takahashi

Ishikawa²,

Asano³

et al. 2012

J. Phys. Chem. C

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“…A common idea among the semiconductor society is that the crust has the structure of amorphous carbon (8,9). A direct fast technique for crust characterization is Raman spectroscopy (10).…”

Section: Introductionmentioning

confidence: 99%

Characterization of 248nm Deep Ultraviolet (DUV) Photoresist after Ion Implantation

Tsvetanova¹,

Vos²,

Vereecke³

et al. 2009

ECS Trans.

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The elemental and structural changes of 248nm DUV photoresist induced by arsenic implantation with high dose and different acceleration energies were studied. For this purpose different analytical techniques were combined. An investigation of the capabilities of the Micro Raman Spectroscopy for analysis of ion implanted photoresist (II-PR) revealed that the method is unreliable for the characterization of II-PR since it induces a modification of the top crust layer. Moreover, alternative methods were used for characterization of the crust. The crust structure was indentified as cross-linked PR by Solid State Nuclear Magnetic Resonance. No experimental evidence for presence of amorphous carbon was found. Furthermore, the elemental composition and mechanical properties of the crust as a function of the implant energy were discussed as a measure for the cross-linking density. Finally, the dopant role in the cross-link process was considered.

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“…However, the steam-injected SPM process is able to completely remove the photoresist and residues in a single process [4], including the most difficult residue located at the border of the edge bead removal region. As previously reported, this "edge bead" residue can require up to two times longer for removal than the central, patterned areas of the wafer [6]. Use of the steam-injected SPM process has shown a 50% reduction in polysilicon loss and a 30% reduction in dopant loss compared to the wet-ash-wet process.…”

Section: Resultsmentioning

confidence: 64%

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist

DeKraker¹,

Pasker²,

Butterbaugh³

et al. 2009

SSP

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Photoresist stripping in IC manufacturing has become more challenging as the number of photoresist levels has increased while at the same time allowable material loss and surface damage has decreased. Heavily implanted photoresist is especially challenging due to the dehydrogenated, amorphous carbon layer that forms on the surface [1]. To facilitate implanted photoresist removal, this layer can be attacked by physical processes such as ion bombardment as part of the common dry ashing approach. However, these physical approaches can lead to surface damage and increased material loss. Another approach is to increase the reactivity of the sulfuric acid – hydrogen peroxide mixture (SPM), so that it can penetrate and dissolve the amorphous carbon layer and achieve complete photoresist removal.

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Wet Resist Strip Capability vs. Implant Energy

Cited by 15 publications

References 1 publication

Effect of Microbubbles on Ozonized Water for Photoresist Removal

Effect of Microbubbles on Ozonized Water for Photoresist Removal

Characterization of 248nm Deep Ultraviolet (DUV) Photoresist after Ion Implantation

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist

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