Wet etching of silicon structures bounded by (311) sidewalls

Resnik, D.; Vrtačnik, D.; Aljancic, U.; Amon, S.

doi:10.1016/s0167-9317(99)00519-5

Cited by 13 publications

(18 citation statements)

References 7 publications

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“…These six lithography masks were prepared to develop gas sensor fabrication processes for Arsenic ion implantation and diffusion, gate insulation layer (SiO 2 ), gate and metal contact line (Pt pattern), passivation layer, and bulk micromachining patterns. A discrete silicon island structure was produced by two successive micromachining process-steps to reduce the heat loss inside the dielectric membrane [6].…”

Section: Methodsmentioning

confidence: 99%

P1.5.3 Gas Sensing Characteristics of Low-powered Dual MOSFET Hydrogen Sensors

Kim¹,

Yoon²,

Kim³

2012

Proceedings IMCS 2012

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Section: Methodsmentioning

confidence: 99%

P1.5.3 Gas Sensing Characteristics of Low-powered Dual MOSFET Hydrogen Sensors

Kim¹,

Yoon²,

Kim³

2012

Proceedings IMCS 2012

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“…Values of etch rates obtained by various authors differ because experiments are performed by various methods [1][2][3][4]. Methods used silicon sphere [5][6], maskless etching technique [7][8][9][10], trenches in silicon etched by dry reactive ion etching [11] or patterns in the masking layer on silicon wafers (various polygons and circles [12][13][14][15][16][17]). During the anisotropic wet etching differences in etch rates cause appearance of some crystallographic planes and disappearance of the others.…”

Section: Introductionmentioning

confidence: 99%

Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt.% TMAX

Smiljanić

Rađenović

Lazić

et al. 2021

Hem Ind

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In this paper, fabrication of silicon microchannels with integrated obstacles by using 25 wt.% tetramethylammonium hydroxide (TMAH) aqueous solution at the temperature of 80?C is presented and analysed. We studied basic island patterns, which present union of two symmetrical parallelograms with the sides along predetermined crystallographic directions <n10> (2<n<8) and <100>. Acute angles of the parallelograms were smaller than 45?. We have derived analytical relations for determining dimensions of the integrated obstacles. The developed etching technique provides reduction of the distance between the obstacles. Before the experiments, we performed simulations of pattern etching based on the level set method and presented evolution of the etched basic patterns for the predetermined crystallographic directions <n10>. Combination of basic patterns with sides along the <610> and <100> crystallographic directions is used to fabricate a matrix of two row of silicon obstacles in a microchannel. We obtained a good agreement between the experimental results and simulations. Our results enable simple and cost-effective fabrication of various complex microfluidic silicon platforms with integrated obstacles.

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“…Anisotropic wet etching of a (100) silicon substrate in 25 wt % tetramethylammonium hydroxide (TMAH) water solution is a well-known process [1,2,3,4,5,6,7,8,9,10,11]. Most of the results have been obtained through the analysis of the etching square or rectangular patterns in the masking layer with sides along <110> crystallographic direction.…”

Section: Introductionmentioning

confidence: 99%

“…Etched silicon structures are limited by various planes during etching in 25 wt % TMAH water solution at a temperature of 80 °C. Because of the differences in etch rates, some planes will appear, while others will disappear during etching [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24]. We performed our experiments for the etching depths of up to 300 µm.…”

Section: Introductionmentioning

confidence: 99%

“…Previous studies of silicon wet etching processes [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ] were conducted using various etching solutions of KOH and TMAH at different temperatures and silicon wafers of various crystallographic orientations. Etching of a (100) silicon in the KOH water solution using circular mask patterns, as well as square, rectangular and octagonal mask patterns with sides along different crystallographic directions was explored in References [ 2 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ].…”

Section: Introductionmentioning

confidence: 99%

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Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

et al. 2019

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Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.

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Wet etching of silicon structures bounded by (311) sidewalls

Cited by 13 publications

References 7 publications

P1.5.3 Gas Sensing Characteristics of Low-powered Dual MOSFET Hydrogen Sensors

P1.5.3 Gas Sensing Characteristics of Low-powered Dual MOSFET Hydrogen Sensors

Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt.% TMAX

Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

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