Wet etching and passivation of GaSb-based very long wavelength infrared detectors

Xu, Xue-Yue; Jiang, Jie; Chen, Weiqiang; Cui, Su-Ning; Zhou, Wu‐Xing; Li, Nong; Chang, Faran; Wang, Guowei; Xu, Yingqiang; Jiang, Danyu; Wu, Donghai; Huang, Hao; Niu, Zhichuan

doi:10.1088/1674-1056/ac4cc1

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…As a result, a relatively small fixed charge density reduces the chance of the band bending in the mesa sidewall. Moreover, intrinsic charges in Si 3 N 4 provide a charge conduction channel of the sidewall, which could have deteriorated the dark current in Si 3 N 4 compared to Al 2 O 3 passivated APD [13].…”

Section: Device Configuration and Fabricationmentioning

confidence: 99%

Surface passivation of random alloy AlGaAsSb avalanche photodiode

Cao,

Peng,

Wang

et al. 2023

Electronics Letters

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AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by conformal coating of Al2O3 via atomic layer deposition (ALD). The dark currents of the APDs with 400‐µm diameter (dry etched) at 90% breakdown voltage (0.9 Vbr) are (5.5 ± 0.5) × 10−5 A, (2.1 ± 0.4) × 10−5 A, and (6.2 ± 0.8) × 10−7 A for non‐passivated, Si3N4 passivated, and Al2O3 passivated devices, respectively. The dark current at a gain of 10 for the Al2O3 passivated device is 1 × 10−8 A which is comparable to the reported value for 100‐µm diameter mesa diodes passivated by SU‐8. Maximum gain values of 6, 12, and 35 were obtained for non‐passivated, Si3N4 passivated, and Al2O3 passivated devices, respectively. Moreover, punch‐through capacitance of 8 pF in a spectral response of 450 to 850 nm was obtained. Thus, Al2O3 passivation can be the best solution for antimonide optoelectronic devices.

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Section: Device Configuration and Fabricationmentioning

confidence: 99%

Surface passivation of random alloy AlGaAsSb avalanche photodiode

Cao,

Peng,

Wang

et al. 2023

Electronics Letters

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“…III-V compound semiconductors are widely used in the production of high-speed electronic devices due to the high mobility of charge carriers [4][5]. These semiconductors are the main materials for making semiconductor lasers (such as GaAs) and infrared detectors (such as GaSb) due to their proper transition to bandgap energies [6][7][8]. In addition, III-V compound semiconductors are used in the production of photocells with high efficiency [9].…”

Section: Introductionmentioning

confidence: 99%

Effect of GaSb Compound on Silicon Bandgap Energy

Iliev,

Zikrillaev,

Ayupov

et al. 2024

J. Nano- Electron. Phys.

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“…As [6][7] evidenced, thin layers of GaSb on various substrates were obtained by using the modern method of molecular beam epitaxy (MBE), and their properties were studied using Raman spectroscopy [8]. The possibility of manufacturing high-frequency electronic devices [9][10] and the possibility of obtaining infrared sensors were shown in [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A Surface Study of Si Doped Simultaneously with Ga and Sb

Iliyev,

Isamov,

Isakov

et al. 2023

East Eur. J. Phys.

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The paper is concerned with the study of silicon samples doped with gallium (Ga) and antimony (Sb) atoms. In particular, the elemental analysis, SEM imaging, and Raman spectrometry analysis of the samples are presented. The elemental analysis revealed that the relative concentrations of Ga (0.4) were almost equal to those of Sb (0.39) and both were formed on the surface of Si. The SEM imaging showed that GaSb microsized islands (diameter of 1 to 15 microns) and a density of ~106 cm-2 were being formed on the surface of Si in the course of the process of diffusion doping. Raman spectral analysis showed that a semiconductor with GaSb molecules self-assemble on Si surface.

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Wet etching and passivation of GaSb-based very long wavelength infrared detectors

Cited by 4 publications

References 21 publications

Surface passivation of random alloy AlGaAsSb avalanche photodiode

Surface passivation of random alloy AlGaAsSb avalanche photodiode

Effect of GaSb Compound on Silicon Bandgap Energy

A Surface Study of Si Doped Simultaneously with Ga and Sb

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