2015
DOI: 10.1016/j.matchemphys.2015.05.022
|View full text |Cite
|
Sign up to set email alerts
|

Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
11
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 23 publications
(12 citation statements)
references
References 29 publications
1
11
0
Order By: Relevance
“…In the frame of this research, several passivation routes have been proposed and studied also by our group for HPGe detector developments [15][16][17][18][19][20][21].…”
Section: Hpge Gamma Detectorsmentioning
confidence: 99%
See 3 more Smart Citations
“…In the frame of this research, several passivation routes have been proposed and studied also by our group for HPGe detector developments [15][16][17][18][19][20][21].…”
Section: Hpge Gamma Detectorsmentioning
confidence: 99%
“…Several surface treatments have been characterized and the chemical composition of the newly formed monolayers has been investigated with regards to the nature of chemical bonding with Ge atop atoms by using Fourier Transform Infrared Spectrometry (FTIR) and X-ray Photoelectron Spectroscopy (XPS) in order to investigate, for example, the formation of Ge-H chemical bonds and the stability of each surface after air exposure [18]. Figure 1 shows the XPS spectra of the differently passivated Ge surfaces: for each sample, the Ge2p peak is simulated by using a different peak deconvolution, which highlights the formation of surface bonds of Ge atoms with hydrogen, oxygen or sulphur depending on the treatment.…”
Section: Hpge Passivationmentioning
confidence: 99%
See 2 more Smart Citations
“…Naderi and Hashim, 2012;Carturan et al, 2015;Li et al, 2014., Mohite andRajpure, 2014;Lv et al, 2013;Song et al, 2015;Kim and Lee, 2013;Masouleh et al, 2015) Flexibility is crucial for electronic device integration and has major implications. In devices, concave and convex bending modes allow access to some otherwise unachievable performance properties.…”
Section: Introductionmentioning
confidence: 99%