Well-width dependence of interface roughness scattering in GaAs/Ga1−xAlxAs quantum wells

Balkan, N.; Gupta, R.; Cankurtaran, Mustafa; Çelik, Hüseyin; Bayrakli, A.; Tiraş, E.; Arıkan, Mehmet Kemal

doi:10.1006/spmi.1996.0458

Cited by 15 publications

(19 citation statements)

References 3 publications

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“…[28][29][30] Our results can also be compared to observations in highmobility two dimensional electron gases in semiconducting heterostructures. 31,32 In these systems, surface roughness is one of the key parameters limiting the electronic mobility. Results in Si MOSFETS and multilayered quantum wells show that the increase of roughness in these structures increases the scattering rate of the electron gas, prompting a reduction of the amplitude of the quantum oscillations.…”

Section: -mentioning

confidence: 99%

“…Results in Si MOSFETS and multilayered quantum wells show that the increase of roughness in these structures increases the scattering rate of the electron gas, prompting a reduction of the amplitude of the quantum oscillations. [31][32][33][34] For example, the reduction of the width of irregularities in GaAs-GaAlAs quantum wells by a factor of 3 results in a 20-times increase of the quantum oscillations amplitude in the system. 31 In conclusion, we have shown that sample roughness plays an important role in the suppression of quantum oscillations in graphite.…”

Section: -mentioning

confidence: 99%

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Effect of structural disorder on quantum oscillations in graphite

Camargo

Kopelevich

Usher

et al. 2016

Applied Physics Letters

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Section: -mentioning

confidence: 99%

Section: -mentioning

confidence: 99%

Effect of structural disorder on quantum oscillations in graphite

Camargo

Kopelevich

Usher

et al. 2016

Applied Physics Letters

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“…This is, in turn, fixed by confining sources. It was indicated [3][4][5][6][7][8][9][10][11][12] that roughness-related scatterings dominate lateral transport in many heterostructures, especially thin square QWs. This is determined by the wave function near the interface.…”

Section: Introductionmentioning

confidence: 99%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

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We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former is smaller than the latter for scattering from the bottom (substrate-side) interface. The mobility of a 2S-doped square QW exhibits a well-width evolution slower than the power-of-six law characteristic of the undoped QW. The mobility may be enhanced by 2S doping. We examine the dependence of the enhancement factor on QW parameters for optimization of the structure. This factor may achieve an order of magnitude, which is much larger than that provided by earlier methods. Our theory is able to reproduce recent experimental data on transport in 2S-doped narrow square QWs, e.g., the mobility dependence on well width and the enhancement factor, which have not been explained so far.

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“…This is, in turn, fixed by confining sources. It was indicated [2][3][4][5][6][7][8][9][10][11] that roughness-related scattering dominates transport in many heterostructures, especially thin square QWs. This is determined by the wave function near the interface.…”

Section: Introductionmentioning

confidence: 99%

On the Role of Magnetic Field Fluctuations in Diffusive Shock Acceleration

Anh¹,

Diep²,

Dong³

et al. 2011

Comm. in Phys.

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Abstract. We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.

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Well-width dependence of interface roughness scattering in GaAs/Ga1−xAlxAs quantum wells

Cited by 15 publications

References 3 publications

Effect of structural disorder on quantum oscillations in graphite

Effect of structural disorder on quantum oscillations in graphite

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

On the Role of Magnetic Field Fluctuations in Diffusive Shock Acceleration

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