Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric

Zhang, S.; Ke, Wei; Zhang, Y.C.; Chen, X.J.; Huang, Shuling; Yin, Hongbu; Liu, G.G.; Yuan, Tingting; Zheng, Yue; Wang, X.H.; Liu, X.Y.

doi:10.1016/j.vacuum.2021.110359

Cited by 10 publications

(1 citation statement)

References 33 publications

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“…In this work, double-channel epitaxial layers of lattice-matched Al 0.83 In 0.17 N/GaN/Al 0.18 Ga 0.82 N/GaN were grown on Si substrates using a metalorganic chemical deposition (MOCVD, AIXTRON Group, Herzogenrath, Germany) system. Although several gate oxide layers were used in GaN-based MOSHEMTs [15][16][17][18][19][20], gallium oxide (Ga 2 O 3 )-based materials have become promising gate oxide layers due to their superior properties of high breakdown voltage, high radiation resistance, high thermal and chemical stability, high Baliga's figure-of-merit, and better interface properties between Ga 2 O 3 film and GaN-based semiconductors [21][22][23]. Furthermore, because high-quality and high-insulating amorphous Ga 2 O 3 films could be deposited using a vapor cooling condensation system [24,25] and were successfully used in GaN-based MOSHEMTs previously [25,26], the system was used to deposit a 30-nm-thick Ga 2 O 3 film as a gate oxide layer in this work.…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Lee

Chyi

et al. 2021

Materials

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In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

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