calculated failure temperatures was 4OO"C, a significant increase. Allowing for the increased thermal resistance of the diamonds. 600 to 640°C was the temperature at failure. Thus current filament instabilities do not form at the lower temperatures in the better diodes. However, there again was scatter in the data, with failures occurring over a broad range of temperatures. The fact that failures usually occur at the mesa perimeter suggests that an interaction between the mesa perimeter and a specific defect is necessary for premature device failure. Further experiments using plated copper heat sinks, .which will allow a more accurate determination of the failure temperature, are planned. RF test data will be obtained from diodes made with the high-temperature metallization and reported at a later date.
CONCLUSIONSThe results described in this paper indicate that it. is possible to produce TRAPATT devices which operate with high efficiency under both wide pulse and CW conditions. Two circuit techniques were determined to substantially increase the number of devices which performed well. Since infant mortality and random unexplained failures are often observed when evaluating TRAPATT diodes, failure analysis was performed on a large number of samples. Our work shows that, for high quality starting material, current filaments do not form and failure is a simple matter of metal alloying. Thus, with proper material, fabrication, and heatsinking, reliable operation is attainable.