Weibull Statistical Dielectric Breakdown in Polyimide up to 400°C

Analysis of breakdown mechanism based on contact area and field enhancement factor of different electrode‐material combinations

“…In this context, although slightly higher electric fields were generated by point-cylinder and spherical-cylinder electrode system compared to the cylinder-cylinder electrode configuration, the contact area became the dominant factor and characteristic breakdown voltages were ordered inversely proportional to the contact areas for PET and presspaper. These results are consistent with studies [24][25][26][27][28][29][30] mentioned in the literature overview and they can be supported by the explanation of higher electrode areas causes an increase in the chance to coincide with defects or impurities underneath the electrode which lead to a failure. 24 On the other hand, FEF of cylinder-cylinder and sphere-cylinder were nearly the same for SBR/NR similar to other materials.…”

“…Also, there are several studies evaluating the effect of electrode contact area on breakdown voltages by changing the diameter of the same type of electrodes. [24][25][26][27][28][29] Lastly, Douar et al measured the breakdown voltages of various polymers with cylinder-cylinder and sphericalspherical electrode systems. Like other studies, they attributed the low breakdown voltages seen with the cylinder-cylinder electrodes to the larger electrode contact area.…”

Passivation in High-Power Si Devices - An Overview

“…Due to their high thermal stability and their good mechanical and electrical properties as well as their chemical resistance, they have become a highly attractive passivation layer material. Zelmat making PI especially interesting for power electronic devices aiming for high temperature operation [18,19]. A review on polyimides and their applications has been presented by Ree, focusing also on the applications of PI in high-quantity markets, such as micro-and optoelectronics, for example for flat panel displays [20].…”

Temperature dependence of surface potential decay of ceramic materials

“…Direct leadframe to chip bonding [3] and high temperature embedded SiC Chip module (ECM) [4] yield good results for temperatures not exceeding 300°C and 280°C respectively. Passivation and encapsulation materials also need to be improved by using either solid insulating materials like polyimide [5] or, as recently proposed, by using fluorocarbons gases [6]. Due their properties, some of these gases may be considered as a real alternative to solid insulation in this field of applications.…”