Wearable red–green–blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing

Choi, Moon Kee; Yang, Jiwoong; Kang, Kwanghun; Kim, Dong Chan; Choi, Changsoon; Park, Chaneui; Kim, Seok Joo; Chae, Sue In; Kim, Sang Woo; Kim, Ji Hoon; Hyeon, Taeghwan; Kim, Dae‐Hyeong

doi:10.1038/ncomms8149

Cited by 556 publications

(312 citation statements)

References 52 publications

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“…The upper image above the printed device column for each printing method depicts PL images of the transfer‐printed RGB QD patterns (reprinted from Refs. 110 and 111 with permission), while the lower part shows the transfer efficiencies of a pattern with different sizes, comparing the resolution limitations of both methods (reprinted from Ref. 111 with permission).…”

Section: Patterning and Alignment Methods For Display Applications Ofmentioning

confidence: 99%

“…110 and 111 with permission), while the lower part shows the transfer efficiencies of a pattern with different sizes, comparing the resolution limitations of both methods (reprinted from Ref. 111 with permission). b) A full‐color QD active matrix display fabricated by ink‐jet printing.…”

Section: Patterning and Alignment Methods For Display Applications Ofmentioning

confidence: 99%

“…This technique also suffers from deteriorating stamping quality as the resolution of the pixel increases (Figure 8 a). An intaglio transfer printing technique was developed to overcome this disadvantage, and is claimed to demonstrate improved CQD transfer efficiencies for smaller features 111. The basic process is similar to that of conventional transfer printing; however, instead of etching the desired pattern on the stamp, the stamp remains featureless in the intaglio method, and following the ink loading stage, the stamp is pressed on an engraved substrate.…”

Section: Patterning and Alignment Methods For Display Applications Ofmentioning

confidence: 99%

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Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

2018

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Colloidal semiconductor nanocrystals (SCNCs) or, more broadly, colloidal quantum nanostructures constitute outstanding model systems for investigating size and dimensionality effects. Their nanoscale dimensions lead to quantum confinement effects that enable tuning of their optical and electronic properties. Thus, emission color control with narrow photoluminescence spectra, wide absorbance spectra, and outstanding photostability, combined with their chemical processability through control of their surface chemistry leads to the emergence of SCNCs as outstanding materials for present and next‐generation displays. In this Review, we present the fundamental chemical and physical properties of SCNCs, followed by a description of the advantages of different colloidal quantum nanostructures for display applications. The open challenges with respect to their optical activity are addressed. Both photoluminescent and electroluminescent display scenarios utilizing SCNCs are described.

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Section: Patterning and Alignment Methods For Display Applications Ofmentioning

confidence: 99%

Section: Patterning and Alignment Methods For Display Applications Ofmentioning

confidence: 99%

Section: Patterning and Alignment Methods For Display Applications Ofmentioning

confidence: 99%

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Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

2018

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“…A wide range of doping strategies have shown both doping polarities in PbS QDs 116 , making it a versatile sensitizing system to combine with any channel material. Solution-processed CQD optoelectronic devices have already demonstrated compatibility with CMOS technology 117,118 and flexible device concepts 119,120 .…”

Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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“…For example, one of the recent studies demonstrated the highly deformable wearable QLEDs whose total thickness is less than 3 μm including device parts and double-layered encapsulation layers. 99 More information on ultrathin encapsulation layers for flexible QLEDs is available in the following section on wearable quantum dot displays.…”

Section: Device Structure and Operation Principles Of Qledsmentioning

confidence: 99%

Flexible quantum dot light-emitting diodes for next-generation displays

et al. 2018

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In the future electronics, all device components will be connected wirelessly to displays that serve as information input and/or output ports. There is a growing demand of flexible and wearable displays, therefore, for information input/output of the nextgeneration consumer electronics. Among many kinds of light-emitting devices for these next-generation displays, quantum dot light-emitting diodes (QLEDs) exhibit unique advantages, such as wide color gamut, high color purity, high brightness with low turn-on voltage, and ultrathin form factor. Here, we review the recent progress on flexible QLEDs for the next-generation displays. First, the recent technological advances in device structure engineering, quantum-dot synthesis, and high-resolution full-color patterning are summarized. Then, the various device applications based on cutting-edge quantum dot technologies are described, including flexible white QLEDs, wearable QLEDs, and flexible transparent QLEDs. Finally, we showcase the integration of flexible QLEDs with wearable sensors, micro-controllers, and wireless communication units for the next-generation wearable electronics.

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Wearable red–green–blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing

Cited by 556 publications

References 52 publications

Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

Colloidal Quantum Nanostructures: Emerging Materials for Display Applications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Flexible quantum dot light-emitting diodes for next-generation displays

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