Weak variband surface layers as an effective means of protection from the surface recombination of photoexcited carriers in infrared threshold CdHgTe photoresistors

Theoretical study of current transfer in thin variable-gap p–n structures with Ohmic contacts

“…Influence of the quasielectric fields, connected with the slopes of conduction and valance band edges, on the carrier transport has been investigated in detail for various cases of practical interest, particularly, for photoresistors [2][3][4][5] and p-n structures with monotonic coordinate dependence of band-gap [6]. As far as the p-n structures with nonmonotonic band-gap profiles are concerned, the effect of band-gap grading on the current transport has been studied as applied to the variable-gap layers at the contacts [7].…”