Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

Du, Ke‐Zhao; Wang, Xing-zhi; Liu, Yu Yang Fredrik; Hu, Peng; Utama, M. Iqbal Bakti; Gan, Chee Kwan; Xiong, Qihua; Kloc, Christian

doi:10.1021/acsnano.5b05927

Cited by 458 publications

(545 citation statements)

References 50 publications

(57 reference statements)

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“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…The previous reports indicated that the band gaps of these MPX 3 bulks range from 1.3 to 3.5 eV,13 suggesting the light absorption at a wide wavelength for photocatalysts.…”

mentioning

confidence: 91%

MnPSe₃ Monolayer: A Promising 2D Visible‐Light Photohydrolytic Catalyst with High Carrier Mobility

et al. 2016

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“…[20] MPTs have been predicted to be exfoliated more easily from the bulk due to their lower cleavage energy relative to that of graphite, and a lower formation energy than that of MoS 2 . [19] Chu et al fabricated a UV photodetector from nickel phosphorus trichalcogenide (NiPS 3 ) that had a rise time shorter than 5 ms, a dark current less than 10 fA, and a 254-nm detectivity of 1.22 × 10 12 Jones. [19] Chu et al fabricated a UV photodetector from nickel phosphorus trichalcogenide (NiPS 3 ) that had a rise time shorter than 5 ms, a dark current less than 10 fA, and a 254-nm detectivity of 1.22 × 10 12 Jones.…”

Section: Introductionmentioning

confidence: 99%

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

Liu

Wang

Fang

et al. 2019

Adv Elect Materials

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data. [2] But as achieving highly miniaturized and integrated devices, the limit of Moore's law era is approaching. Because of their unique physicochemical properties, such as superior carrier mobility and high photoelectric conversion efficiency, two-dimensional (2D) materials have attracted attention to facilitate the performance improvement of photo detectors. [3] However, weak switching characteristics, limited wavelength detection, and instability have restrained applications of 2D materials. For example, ultra-broadband photodetectors using graphene [4] have zero bandgaps with no switching characteristics. [2,5] Graphene-like black phosphorus (BP) has a thickness-modulated direct bandgap from 0.3 eV (bulk) to 2 eV (monolayer), [6] but irreversible ambient oxidization greatly degrades its performance. [7] Transition-metal dichalcogenides (TMDs), such as MoS 2 , [8] MoSe 2 , [9] and WS 2 , [10] also have thickness-tunable bandgaps, [11] low dark currents, and relatively high carrier mobilities. [12] However, their limited bandgaps for solar-blind ultraviolet have become impediments. [13] Hence, materials with suitable switching characteristics, tunable bandgaps, high carrier mobilities, and robust stabilities under ambient conditions are urgently needed.Recently, metal phosphorus trichalcogenides (MPTs) with superior optical, electronic, magnetic, and catalytic properties have garnered tremendous interest because of their unique electronic structures and energy bands. [14] They have a common MPX 3 stoichiometry that spans many elements (M = Cr, Mn, Fe, Co, Ni, Zn or Cd; X = S or Se). The metal cations (M 2+ ) weakly bond the anion group bipyramids [P 2 X 6 ] 4− in a honeycomb structure, while the [P 2 X 6 ] 4− unit is formed by one P atom coordinated with three S (or Se) atoms. The distinctive MPT properties are derived from the electron number in the d orbital, or outermost shell, of the metal elements, and the high spin state of metal atoms resulting from the weak ligand field of the [P 2 X 6 ] 4− unit. [15] As a result, MnPSe 3 flakes have been reported to be a potential spintronic material because it can be transformed from an antiferromagnetic semiconductor to a ferromagnetic semi-metal via carrier doping. [16] Furthermore, the carrier mobility of MnPSe 3 approaches 625.9 cm 2 V −1 s −1 , [14a] which is higher than the aforementioned materials used in field-effect transistors (FETs, where BP has 275 cm 2 V −1 s −1 , [17] MoS 2 has > 200 cm 2 V −1 s −1 , [18] WSe 2 has 200 cm 2 V −1 s −1 [12c] , and WS 2 has 214 cm 2 V −1 s −1[12b] ). By varying the transition Photodetectors fabricated from very thin two-dimensional (2D) materials with high photoelectric conversion efficiency have unprecedented potential to overcome the limitations of conventional photodetectors. In particular, recent interest in 2D metal phosphorus trichalcogenides (MPTs) has derived from their strong light absorption, tunable bandgap, and robust stability. Here, large and atomically thin NiPS 3 flakes, prepared by electrochemical ...

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Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

Cited by 458 publications

References 50 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

MnPSe₃ Monolayer: A Promising 2D Visible‐Light Photohydrolytic Catalyst with High Carrier Mobility

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes

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Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

Cited by 458 publications

References 50 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

MnPSe3 Monolayer: A Promising 2D Visible‐Light Photohydrolytic Catalyst with High Carrier Mobility

A Robust 2D Photo‐Electrochemical Detector Based on NiPS3 Flakes

Contact Info

Product

Resources

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MnPSe₃ Monolayer: A Promising 2D Visible‐Light Photohydrolytic Catalyst with High Carrier Mobility

A Robust 2D Photo‐Electrochemical Detector Based on NiPS₃ Flakes