Weak localization in thin films

Singular or non-Fermi liquids

“…One is tempted to use the critical points of impurity models (see for example [70] and references therein), but runs into the di culty of having to tune to special symmetries. The ideas of critical 41 We note that this as well as the result for in CeCuAu are examples of an anomalous dimension, as the engineering dimension of the susceptibility is 1=energy-see the remark made just after Eq. (177).…”

“…The experiments measured resistivity on not very clean samples of high density with resistivity of O(10 −2 h=e 2 ). In a limited range of temperature, the predicted logarithmic rise in resistivity with decreasing temperature with about the right prefactor was found [41]. In view of the perturbative results of Altshuler and Aronov [14] and the knowledge that electron-electron interactions alone lead to a Wigner insulator at low Fig.…”

“…(217) is derived microscopically by considering repeated backward scattering between impurities. It can also be derived by considering quantum interference between di erent paths to go from one point A to another B [41]. The total probability for this process is…”

Measurement by antilocalization of interactions between InAs surface electrons and magnetic surface species

“…To study the interactions we hence use the weak-localization quantum coherence corrections to the conductivity, caused by interference between backscattered time-reversed electron trajectories. The interference leads to a resistance R with a specific dependence on the magnetic field B applied normally to the surface, under strong SOI known as antilocalization (AL) [7][8][9] .…”

Electron Transport and Spin Scattering in Very Thin Disordered Metallic Films

“…The use of this method means that we focus on the case of weak electron-impurity scattering specified by the Ioffe-Regel criterion [16]. In this case the weak localization corrections which are caused by quantum interference effects are small compared with the Drude conductivity [17][18][19]. The total effective differential cross-section for scattering of the completely polarized conduction electrons in the considered system has the following form:…”