Weak Localization in Graphene Flakes

Tikhonenko, F. V.; Horsell, D. W.; Savchenko, A. K.

doi:10.1103/physrevlett.100.056802

Cited by 462 publications

(645 citation statements)

References 18 publications

(37 reference statements)

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“…[36][37][38] The chirality of graphene would give rise to the destructive interference of charge carriers in graphene at zero magnetic field. Thus, an increase in the conductivity, namely weak antilocalization (WAL), is expected to occur in monolayer graphene as long as the chiral symmetry is preserved during coherent backscattering.…”

Section: Scanning Tunneling Microscope (Stm) Measurements Were Performentioning

confidence: 99%

“…47,48 The other is the direct Coulomb interaction ( −1 ) among the charge carriers. 38, 45, 46 By considering both mechanisms, 37, 48 the dephasing rate can be written aswhere g(n)=σh/e 2 . The linear temperature dependent term corresponds to the inelastic scattering with small momentum transfer, while the parabolic temperature dependent term is due to large momentum transfer by the direct Coulomb interaction between charge carriers.…”

mentioning

confidence: 99%

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Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Lin

Rui

et al. 2017

ACS Nano

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Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on 2 electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices. KEYWORDS: graphene, charge transport, intervalley scattering, graphitic nitrogen doping, atomically sharp scattering center Graphene, a honeycomb lattice of single layer carbon atoms with a Dirac-like energy dispersion, has attracted extensive interests in recent years owing to its extraordinary charge transport properties and potential applications in electronic devices. [1][2][3][4][5] However, charge impurities universally exist in graphene and influence its electronic properties. [6][7][8][9][10] A particular case is when approaching the Dirac point at which, because of the vanishing density of states, the transport properties of graphene are expected to be highly sensitive to 3 scattering from charged impurities. [6][7][8][9][10] Previous studies of charge carrier scattering in graphene are mainly achieved with the scattering centers introduced by physical methods, such as ion irradiation, 7, 8 adsorption of adlayers, 9 low temperature deposition 10 and spin coating [11][12][13] of nanoparticles, and atomic hydrogen adsorption. 14 These methods could inevitably induce randomness and disorder in graphene and thereby largely degrade its transport properties. Compared with the physical methods, chemical doping has the advantage to achieve scattering centers in graphene with good replicability, lattice stability, and tunablity of doping concentration through the substitution of carbon atoms in the graphene lattice by dopant atoms. Among numerous dopants, nitrogen (N) atoms can be chemically incorporated into graphene forming covalent bonds with carbon (...

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Section: Scanning Tunneling Microscope (Stm) Measurements Were Performentioning

confidence: 99%

mentioning

confidence: 99%

Electron–Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Lin

Rui

et al. 2017

ACS Nano

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“…Previous work has typically found similar values for L ϕ of around 0.6 μm. [9][10][11][12] In Ki et al, 11 there has been some previous work carried out on the carrier density dependence by using a single sample with a backgate. In their work they found a superlinear increase of L ϕ with carrier density.…”

Section: Scattering Lengthsmentioning

confidence: 99%

“…(1) and these were converted to scattering lengths using, L ϕ,i, * = τ ϕ,i, * D. Figure 3 shows the extracted scattering lengths, from our data and from the literature. [9][10][11][12] Care was taken to extract all values for as close as possible to the same temperature, in this case 1.5 K. This is done since L ϕ in particular is known to vary strongly with temperature. [9][10][11][12] Fits to the data are made using a simple power law, Bn A , the results of which are shown in Table I.…”

Section: Scattering Lengthsmentioning

confidence: 99%

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Weak localization scattering lengths in epitaxial, and CVD graphene

et al. 2012

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Weak localization in graphene is studied as a function of carrier density in the range from 1 × 10 11 cm −2 to 1.43 × 10 13 cm −2 using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L ϕ , L i , and L * on carrier density. We find no significant carrier dependence for L ϕ , a weak decrease for L i with increasing carrier density just beyond a large standard error, and a n −1/4 dependence for L * . We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity.

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