2007
DOI: 10.1103/physrevlett.98.176805
|View full text |Cite
|
Sign up to set email alerts
|

Weak Localization in Bilayer Graphene

Abstract: We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance--a signature of weak localization--is observed at different carrier densities, including the electroneutrality region. It is very different, however, from the weak localization in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effecti… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

32
219
2
1

Year Published

2007
2007
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 224 publications
(254 citation statements)
references
References 29 publications
32
219
2
1
Order By: Relevance
“…However, the effect of warping and AB-asymmetric disorder suppresses this difference, and the inter-valley scattering on sharp defects and edges leads to the usual WL effect both in monolayer and bilayer, with the WL magnetoresistance saturated at a relatively weak magnetic field determined by the inter-valley scattering rate Kechedzhi et al 2007). This seems to be consistent with the recent observations of weak localization effects in both monolayers and bilayers (Gorbachev et al 2007) …”
Section: Discussionsupporting
confidence: 80%
“…However, the effect of warping and AB-asymmetric disorder suppresses this difference, and the inter-valley scattering on sharp defects and edges leads to the usual WL effect both in monolayer and bilayer, with the WL magnetoresistance saturated at a relatively weak magnetic field determined by the inter-valley scattering rate Kechedzhi et al 2007). This seems to be consistent with the recent observations of weak localization effects in both monolayers and bilayers (Gorbachev et al 2007) …”
Section: Discussionsupporting
confidence: 80%
“…The form of this correction is described well by equation (1.1). All parameters determined from fits to this equation are temperature independent below Tw3 K, and here we focus only on these T-independent values (the T dependence of the phase-breaking rate t 4 at higher temperatures is discussed elsewhere by Gorbachev et al (2007) and Tikhonenko et al (2007)). …”
Section: Experiments and Resultsmentioning
confidence: 99%
“…The inset data show the quantum Hall plateaux measured for each sample and the expected difference of half of a resistance quantum (h=4e 2 for graphene) between the systems is clearly seen. The correction to the conductivity due to WL is measured by the procedure given by Gorbachev et al (2007) where, to negate the fluctuations, ds is averaged over a gate voltage window, DV g Z 2V: dsZ hsðB; V g ÞKsð0; V g Þi DV g . Figure 2 shows the effect of magnetic field on the conductivity of samples B and M both in the high electron concentration region (nw1.5!10 12 cm K2 ) and the electroneutrality region.…”
Section: Experiments and Resultsmentioning
confidence: 99%
“…Since the isolation of graphene flakes, 1 the chiral nature of quasiparticles in monolayer and bilayer graphene has been observed in a range of phenomena including the integer quantum Hall effect, [2][3][4] Klein tunneling, [5][6][7][8] weak localization, [9][10][11][12][13][14][15][16] and photoemission. [17][18][19][20] Generally speaking, the effective mass models [21][22][23][24][25][26][27][28][29][30] of monolayer and bilayer graphene have been very successful in describing these phenomena.…”
Section: Introductionmentioning
confidence: 99%