Weak localization effect in pulsed laser deposited ZnO film

Agrawal, Arpana; Dar, Tanveer Ahmad; Sen, Pratima

doi:10.1088/1742-6596/534/1/012042

Cited by 1 publication

(1 citation statement)

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“…It is well-known that disorder can give rise to orbital magnetoresistance effects explained by weak-localization theory. These effects have been observed in several ZnO samples. − However, we note that these weak-localization effects are observable at very low temperatures. The reported positive magnetoresistance in ZnO related to weak localization usually vanishes at temperatures above 20 K. On the other hand, the positive magnetoresistance effect we observe after creating the nonmagnetic potential well between magnetic regions persists up to room temperature.…”

Section: Resultsmentioning

confidence: 54%

All-Semiconducting Spin Filter Prepared by Low-Energy Proton Irradiation

Botsch

Lorite

Kumar

et al. 2019

ACS Appl. Electron. Mater.

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We report on a spin filter effect that emerges at potential barriers between a ≃10 nm thick magnetic surface layer and nonmagnetic regions prepared at the surface of Li-doped ZnO microwires by low-energy H+-ion implantation. The spin filter effect manifests in a large positive magnetoresistance that persists to room temperature, is linear in magnetic field, shows a maximum around 30 K, scales linearly with the number of successive potential barriers created along the microwires, and vanishes when the potential barrier is absent. The specific features of the observed effect can be reproduced with a model that describes a spin-polarized transport through a potential barrier acting as a minority spin filter with an efficiency P sf > 10% at room temperature and P sf = 100% at 10 K.

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