Weak localization and electron–electron interactions in few layer black phosphorus devices

Abstract

Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (~T -0.4 ).These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.The experimental isolation of graphene on insulating substrates[1] over a decade ago has led to the explosively increasing interest in two-dimensional (2D) materials [2]. A plethora of 2D atomic layers have been investigated, with properties ranging from semi-metallic, metallic, semiconducting, insulating and superconducting, with many fascinating electronic, optical, thermal and mechanical properties.One of the recent additions to the family of 2D materials is phosphorene, which is singleor few-atomic layers of black phosphorus (BP). BP is the most stable form of elemental phosphorus, consisting of layers held together by weak van der Waal's forces. Within each layer, the phosphorus atoms are arranged in a puckered structure [3,4] It has recently piqued the interest of the scientific community due to its high mobility [5], direct band gap that is tunable by thickness or strain [6][7][8][9][10][11][12], and large in-plane anisotropy [4,7,12,13]. These properties make BP a highly attractive candidate for electronics, thermal and optoelectronics applications, as well as a *

Dephasing in strongly anisotropic black phosphorus

“…[39]. Consistent with this conclusion, a weaker power-law dependence L ϕ ∝ T −0.4 was indeed very recently observed in another paper on few-layer bP, but nonetheless interpreted as evidence for electron-electron interactions in two dimensions as the dominant scattering mechanism [41].…”

Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector

“…The high mobility and small bandgap of BP indicate that the avalanche carrier multiplication is possible and BP is a promising active material for an APD. In addition, we note that the shorter carrier‐carrier scattering time compared to the carrier‐phonon scattering time in BP also results in the occurrence of avalanche carrier multiplication at a low applied voltage …”

A Perspective on Recent Advances in Phosphorene Functionalization and Its Applications in Devices

“…This was explained by a quasi‐one‐dimensional behavior of bP due its pronounced crystalline anisotropy . The relevance of crystalline anisotropy was also highlighted in a recent in‐plane magneto‐transport study which showed an unexpected, non‐classical longitudinal magneto‐resistance .…”

“…Weak localization was studied in few‐layer bP FETs, see Figure a. Weak localization is a quantum‐mechanical effect related to phase‐coherent scattering at low temperature and results in a resistance increase due to enhanced backscattering, as shown in Figure b.…”