2013
DOI: 10.1103/physrevb.88.104416
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Weak ferromagnetism and domain effects in multiferroic LiNbO3-type MnTiO3-II

Abstract: Magnetic order consistent with multiferroism has been observed in the acentric LiNbO 3 -type, high pressure form II of MnTiO 3 using neutron diffraction and magnetization measurements. Spin order below the 28 K magnetic transition has propagation vector (0 0 0), and spins lie in the ab plane. Representation symmetry analysis shows that the antiferromagnetic Mn 2+ spin component observed by neutron scattering, of magnitude 3.9(1) μ B at 2 K, coexists with a weak ferromagnetic component of magnitude 0.0014 μ B .… Show more

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Cited by 48 publications
(41 citation statements)
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“…These values are close to those observed in other LN‐type manganese oxides 20c. 22 The TaO 4 N 2 octahedron is distorted as well with three short (1.99 Å) and three long (2.11 Å) Ta‐O(N) bonds, which are comparable with those of perovskite oxynitrides A TaO 2 N ( A =alkali earth) 23…”
Section: Structural Parameters Of Mntao2n From Simultaneous Rietveld supporting
confidence: 82%
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“…These values are close to those observed in other LN‐type manganese oxides 20c. 22 The TaO 4 N 2 octahedron is distorted as well with three short (1.99 Å) and three long (2.11 Å) Ta‐O(N) bonds, which are comparable with those of perovskite oxynitrides A TaO 2 N ( A =alkali earth) 23…”
Section: Structural Parameters Of Mntao2n From Simultaneous Rietveld supporting
confidence: 82%
“…The magnetic moment at 6 K is 3.63 μ B , which is lower than the expected value of 5.0 μ B for Mn 2+ in a high spin state. We note, however, that this value is similar to that of MnTiO 3 (3.9 μ B )22 and strongly suggests the existence of strong frustration as pointed out from the magnetic susceptibility measurements.…”
Section: Structural Parameters Of Mntao2n From Simultaneous Rietveld supporting
confidence: 77%
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“…Thin film deposition by molecular beam epitaxy or pulsed laser deposition (PLD) is often the method of choice to prepare high-quality epitaxial films because they allow for the stabilization of otherwise metastable structures and tuning material properties by the introduction of lattice strain. Thin film deposition also eliminates the need for specialized high-pressure apparatus needed for growing crystals of the above MTiO 3 compounds in the LNO-type structure [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…For example, it was shown [13] how a polar distortion -in an antiferromagnetic-paraelectric (AFM-PE) material displaying linear magnetoelectricity -would induce weak-ferromagnetism in the LiNbO 3 structure, e.g., FeTiO 3 [14] or MnSnO 3 [15], and subsequently allow for the electric-field switching of the magnetization by 180…”
Section: Introductionmentioning
confidence: 99%