2016
DOI: 10.1134/s106378341609002x
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Weak antilocalization in thin films of the Bi2Te2.7Se0.3 solid solution

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Cited by 2 publications
(1 citation statement)
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“…Ions Cr 3+ , on which EPR is observed, may have a stabilized valence, or may participate in a double exchange [10], the carriers of which in this case are donor Dirac electrons, the state of motion which are topologically protected. In this case, the lifetime of the Cr 3+ and Cr 2+ ions, or the exchange frequency, will affect the EPR linewidth and the phase of the Dirac electron wave function, which determines the modes of weak localization or antilocalizations [20][21][22][23]. This circumstance indicates the opportunity that the conditions for the implementation of the weak antilocalization regime will depend on the direction of motion of the Dirac electrons and, depending on the direction of the current, a positive [24] or a negative [25] magnetoresistance.…”
Section: Electron Paramagnetic Resonancementioning
confidence: 99%
“…Ions Cr 3+ , on which EPR is observed, may have a stabilized valence, or may participate in a double exchange [10], the carriers of which in this case are donor Dirac electrons, the state of motion which are topologically protected. In this case, the lifetime of the Cr 3+ and Cr 2+ ions, or the exchange frequency, will affect the EPR linewidth and the phase of the Dirac electron wave function, which determines the modes of weak localization or antilocalizations [20][21][22][23]. This circumstance indicates the opportunity that the conditions for the implementation of the weak antilocalization regime will depend on the direction of motion of the Dirac electrons and, depending on the direction of the current, a positive [24] or a negative [25] magnetoresistance.…”
Section: Electron Paramagnetic Resonancementioning
confidence: 99%