Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe

Akiyama, Ryota; Fujisawa, Kazuki; Sakurai, R.; Kuroda, Shinji

doi:10.1088/1742-6596/568/5/052001

Cited by 20 publications

(19 citation statements)

References 22 publications

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“…And, given the valley degeneracy of SnTe, the coupling also likely comes from the scattering between two Dirac states on the same surface. The coupling between bulk and surface states has also been observed by Kuroda et al [ 51 ] who reported that both the numbers of transport channel and phase coherence length decrease with increase of temperature. This is because that thermal excited carriers take part in the transport and interact with the surface states at higher temperature.…”

Section: Quantum Coherence Transport Of Topological Surface Statessupporting

confidence: 62%

Low-Dimensional Topological Crystalline Insulators

Wang

Feng

et al. 2015

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Topological crystalline insulators (TCIs) are recently discovered topological phase with robust surface states residing on high-symmetry crystal surfaces. Different from conventional topological insulators (TIs), protection of surface states on TCIs comes from point-group symmetry instead of time-reversal symmetry in TIs. The distinct properties of TCIs make them promising candidates for the use in novel spintronics, low-dissipation quantum computation, tunable pressure sensor, mid-infrared detector, and thermoelectric conversion. However, similar to the situation in TIs, the surface states are always suppressed by bulk carriers, impeding the exploitation of topology-induced quantum phenomenon. One effective way to solve this problem is to grow low-dimensional TCIs which possess large surface-to-volume ratio, and thus profoundly increase the carrier contribution from topological surface states. Indeed, through persistent effort, researchers have obtained unique quantum transport phenomenon, originating from topological surface states, based on controllable growth of low-dimensional TCIs. This article gives a comprehensive review on the recent progress of controllable synthesis and topological surface transport of low-dimensional TCIs. The possible future direction about low-dimensional TCIs is also briefly discussed at the end of this paper.

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Section: Quantum Coherence Transport Of Topological Surface Statessupporting

confidence: 62%

Low-Dimensional Topological Crystalline Insulators

Wang

Feng

et al. 2015

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“…The band inversion has been confirmed, and surface states have been observed, by angle-resolved photoemission spectroscopy (ARPES) [7,8]. Experimental evidence for topologically non-trivial surface states has been obtained in transport studies of thin films [9,10]. It has been proposed theoretically that combining topological surface states with bulk superconductivity may yield Majorana modes, which are of interest for use in quantum computing schemes [11,12].…”

Section: Introductionmentioning

confidence: 86%

“…Observations of WAL [39] in low-temperature magnetoresistance measurements on pristine SnTe have been used to identify the presence of topologically-protected surface states [9,10]. Recent theoretical work has demon- strated that one can also observe WAL from bulk Diraclike states with strong spin-orbit coupling [24].…”

Section: Magnetoresistancementioning

confidence: 99%

Electron and hole contributions to normal-state transport in the superconducting system Sn1−xInxTe

Zhang

Chi

et al. 2018

Phys. Rev. B

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Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn1−xInxTe single crystals with 0.1 ≤ x ≤ 0.45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ∼ 0.25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0.45, corresponding to the highest superconducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we find evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.

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“…The MR curve at 5 K (black) clearly shows a cusp near zero field, which is a sign of the WAL effect and suggests the dominance of topological surface states. At elevated temperature, the cusp disappears, and the curves in the low-field regime (not shown) are dominated by the parabolic B-dependence of the bulk states [46,47], which is a reflection of the bulk carriers under a Lorentz force in a perpendicular field. The magnitude of the MR changes monotonically with temperature-a fact that needs further study to fully understand.…”

Section: Resistivity Behaviors Of In-doped Pb 1−x Sn X Tementioning

confidence: 99%

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Zhong

Schneeloch

et al. 2017

Crystals

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Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1−x Sn x ) 1−y In y Te. For samples with a tin concentration x ≤ 50%, the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ∼2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with ∼6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.

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Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe

Cited by 20 publications

References 22 publications

Low-Dimensional Topological Crystalline Insulators

Low-Dimensional Topological Crystalline Insulators

Electron and hole contributions to normal-state transport in the superconducting system Sn1−xInxTe

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

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