Weak anti-localization properties of high-quality topological Bi2Te3 nanofilms prepared by home-built pulsed laser enhanced molecular epitaxy system

Zheng, Yueqian; Wang, Xuan; Han, Bai; Zhi, Sun

doi:10.1016/j.jmrt.2022.05.097

Cited by 5 publications

(4 citation statements)

References 40 publications

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“…Thus, in-depth exploration of the electrical transport properties of BSTS's topological surface states is of considerable scientific value. To figure out the electrical transport properties of BSTS, the Physical Property Measurement System (PPMS) was applied to identify the electrical transport properties of the samples [ 19 ]. Resistance measurements were performed using the co-linear four-probe method, while Hall resistance was assessed using the van der Pauw method.…”

Section: Discussionmentioning

confidence: 99%

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Xu,

Zheng,

Wang

et al. 2024

Heliyon

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Section: Discussionmentioning

confidence: 99%

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Xu,

Zheng,

Wang

et al. 2024

Heliyon

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“…In this study, we successfully fabricated Bi 1.2 Sb 0.8 Te 0.4 Se 2.6 (BSTS) thin films using the Laser Molecular Beam Epitaxy (LMBE) system [ 14 , 15 ]. The process involved a multielement doping method to compensate for two opposing types of charged defects: Te antisite defects and Se vacancy defects.…”

Section: Introductionmentioning

confidence: 99%

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

Zheng,

Xu,

Wang

et al. 2024

Molecules

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This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10–107 Hz) and high-frequency (0.5–2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

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“…As illustrated in Figure 1a, we present a schematic diagram of the LMBE equipment preparation. 18 A noteworthy innovation in our approach lies in the use of a mixed-target technique, as shown in Figure 1b. Through the rotation of the target material, we ensure that an excess of Te and Se atoms are ejected by the laser in two preparation processes, rendering the epitaxial chamber enriched with either Te or Se.…”

Section: ■ Introductionmentioning

confidence: 99%

“…As illustrated in Figure a, we present a schematic diagram of the LMBE equipment preparation . A noteworthy innovation in our approach lies in the use of a mixed-target technique, as shown in Figure b.…”

Section: Introductionmentioning

confidence: 99%

Bulk-Surface Transport Separation and Topological Surface States Modulation of TI–TI Heterostructures

Zheng,

Xu,

Wang

et al. 2024

Crystal Growth & Design

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In this study, we prepare topological insulator (TI) heterostructures (TI−TI) with a thickness of 25 nm and various interlayer distances, utilizing the laser molecular beam epitaxy (LMBE) system. Our characterization analysis revealed high-quality morphological features and distinct heterolayered structures. Moreover, we successfully isolated bulk-surface transport properties by employing the comprehensive physical property measurement system (PPMS) and terahertz time-domain spectroscopy (THz-TDS). Compared to the monolayer binary structures, the TI−TI heterostructures demonstrated enhancement of the bulk insulation and improvement of surface conductivity. Notably, various interlayer spacings played a pivotal role in modulating both the bulk-surface transport and topological surface states. TIs have emerged as an ideal medium for information transmission in quantum chips, terahertz optical devices, and low-energy spintronic devices. This research not only provides deeper theoretical insights but also holds significant implications for practical applications.

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Weak anti-localization properties of high-quality topological Bi2Te3 nanofilms prepared by home-built pulsed laser enhanced molecular epitaxy system

Cited by 5 publications

References 40 publications

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

Bulk-Surface Transport Separation and Topological Surface States Modulation of TI–TI Heterostructures

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