Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

Bosq, Todd W. Du; Peale, Robert E.; Nelson, E. W.; Muravjov, A. V.; Walters, D.A.; Subramanian, G.; Sundaram, Kalpathy B.; Fredricksen, Christopher J.

doi:10.1016/j.optlastec.2004.02.011

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…Such regions of the mirror lack the calculated high reflectivity. A more monolithic construction could be made by wet chemical etching to produce the gaps, 11 eliminating the need for the small Si spacers. Nevertheless, the preliminary experiments described here demonstrate that mirrors of sufficient reflectivity for use in the cavity of the low-gain p-Ge laser can be made with just a few layers of Si separated by empty gaps.…”

Section: Discussionmentioning

confidence: 99%

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Bosq¹,

Muravjov²,

Peale³

et al. 2005

Appl. Opt.

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Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 microm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered.

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Section: Discussionmentioning

confidence: 99%

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Bosq¹,

Muravjov²,

Peale³

et al. 2005

Appl. Opt.

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show abstract

“…From Figure 3, it is clear that the brass washer and Si stack supports cover portions of the active crystal which might support laser modes, though these regions of the mirror would not have the high design reflectivity. A more monolithic construction can be made by wet chemical etching to produce the gaps, 11 eliminating the need for the small silicon spacers.…”

Section: Discussionmentioning

confidence: 99%

High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser

2004

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Multi-layer mirrors capable of >99.9% reflectivity at ~100 µm wavelengths were constructed using thin silicon etalons separated by empty gaps. Due to the large difference between the index of refraction of silicon (3.384) and vacuum (1), calculations indicate that only three periods are required to produce 99.9% reflectivity. The mirror was assembled from high purity silicon wafers, with resistivity over 4000 ohm-cm to reduce free carrier absorption. Wafers were double side polished with faces parallel within 10 arc seconds. The multi-layer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser.

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“…The authors have worked for many years to advance the technology of inter-valence-band hot hole lasers based on bulk rods of p-Ge having ∼cubic centimeter active volume. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] One of us (AVM) has been involved in this research since its beginnings more than two decades ago. 20 Features of this laser are broad tunability (1.5-4.2 THz) with high spectral density in a single device ( Fig.…”

mentioning

confidence: 99%

Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

Peale¹,

Dolguikh²,

Muravjov³

2007

Journal of Nanoelectronics and Optoelectronics

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This paper reviews, compares, and contrasts recent gain calculations for a laser concept in deltadoped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities.

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Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

Cited by 5 publications

References 18 publications

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser

Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

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