Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform

Purnawirman,; Li, Nanxi; Magden, Emir Salih; Singh, Gurdial; Moresco, M.; Adam, Thomas; Leake, Gerard; Coolbaugh, Douglas; Bradley, Jonathan D. B.; Watts, Michael R.

doi:10.1364/ol.42.001772

Cited by 32 publications

(19 citation statements)

References 23 publications

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“…Monolithically integrated erbium-doped waveguide lasers have been demonstrated with both continuous-wave and pulsed lasing using erbium co-sputtered with Al 2 O 3 as a host [33,[40][41][42][43][44][45]. The low thermo-optic coefficient of Al 2 O 3 enables robust operation of the laser over a wide temperature range [46,47], important for control-free WDM systems [48]. However, previously demonstrated lasers could not be actively tuned.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped AlO sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two SiN microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 μs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.

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Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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“…Photolithography is currently used as a part of the standard complementary metal-oxide-semiconductor (CMOS) fabrication process in the microelectronics industry. Besides, it has been widely used in silicon photonics for optical and electronic components patterning [14][15][16][17][18][19]. Recently, it has also been applied for large-area metasurface fabrication [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Large-area pixelated metasurface beam deflector on a 12-inch glass wafer for random point generation

Dong

et al. 2019

Nanophotonics

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Metasurface-based beam deflector, as an important optical element to bend the light propagation direction, has drawn a lot of interests in research to achieve miniaturization of devices and reduction of system complexity. Based on the 12-inch immersion lithography technology, in this work, an ultra-thin and large-area pixelated metasurface beam deflector with a footprint of 2500 × 2500 μm, formed by nanopillars with diameters from 221 to 396 nm, is demonstrated on a 12-inch glass wafer. The 21 × 21 array of deflectors is designed to bend the input light in different directions and to generate 441 random points. In addition, the layer transfer on the 12-inch glass wafer makes the device working in transmission mode at a 940-nm wavelength. The random point array generated from the experiment shows good match with the design. This pixelated metasurface beam deflector can generate random points simultaneously and has potential to make beam steering by switching each pixel of the beam deflector, which can be applied on motion detection, facial recognition, and light detection and ranging.

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“…Furthermore, holmium-doped lasers have the potential to be in-band pumped using mature thulium laser technology [7]. Silicon photonics is a promising technology that has enabled production of large-scale devices [9], ultralow power modulators [10], and monolithically integrated lasers [11][12][13][14] on a single chip with a low cost and compact size. In particular, integrated lasers beyond 2.0 μm are in demand due to the diminishing two-photon absorption of silicon [15,16] while also providing a new communication band for integrated systems [1].…”

Section: Introductionmentioning

confidence: 99%

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers

Li¹,

Magden²,

Su³

et al. 2018

Opt. Express

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Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The AlO:Ho glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and AlO:Ho gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

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Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform

Cited by 32 publications

References 23 publications

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Large-area pixelated metasurface beam deflector on a 12-inch glass wafer for random point generation

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers

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