Wavelength dependence of short-circuit current decay in solar cells

Ray, U. C.; Agarwal, Seema

doi:10.1063/1.340084

Cited by 13 publications

(9 citation statements)

References 11 publications

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“…The solar cell (n + -p-p + ) or (p + -p-n + ) has been widely studied [1] [2] [3] [4] for the determination of the phenomenological parameters of minority charge carriers in the base [5] which are: lifetime, diffusion length and surface recombination velocity. The illumination of the solar cell is monochromatic [6] [7] or composite [8] [9] [10], arriving perpendicularly on the front or rear face (bifacial), or laterally for the series vertical multi junctions [11].…”

Section: Introductionmentioning

confidence: 99%

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Dede¹,

Ba²,

Ba³

et al. 2020

EPE

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The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to absorption and electronic parameters. Then from the obtained short circuit photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n + -p-p + solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.

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Section: Introductionmentioning

confidence: 99%

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Dede¹,

Ba²,

Ba³

et al. 2020

EPE

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“…base depth, for different frequencies. As the solar cell is back illuminated with high absorption coefficient (α), the density is high at the incident surface (back) [10] and weak at the junction because of short circuit operating condition (high Sf value) [41] [48].…”

Section: Methodsmentioning

confidence: 99%

“…1) The absorption of monochromatic [8] or polychromatic [9] light, at a depth x, is related to the monochromatic absorption coefficient α(λ) at the wavelength (λ) and the gap energy (Eg) of the material [10] [11].…”

Section: Introductionmentioning

confidence: 99%

Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

Sall¹,

Diarisso²,

Fall³

et al. 2021

EPE

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A bifacial silicon solar cell under monochromatic illumination in frequency modulation by the rear side is being studied for the optimization of base thickness. The density of photogenerated carriers in the base is obtained by resolution of the continuity equation, with the help of boundary conditions at the junction surface (n + /p) and the rear face (p/p + ) of the base. For a short wavelength corresponding to a high absorption coefficient, the AC photocurrent density is calculated and represented according to the excess minority carrier's recombination velocity at the junction, for different modulation frequency values. The expression of the AC recombination velocity of excess minority carriers at the rear surface of the base of the solar cell is then deduced, depending on both, the absorption coefficient of the silicon material and the thickness of the base. Compared to the intrinsic AC recombination velocity, the optimal thickness is extracted and modeled in a mathematical relationship, as a decreasing function of the modulated frequency of back illumination. Thus under these operating conditions, a maximum short-circuit photocurrent is obtained and a low-cost bifacial solar cell can be achieved by reducing material (Si) to elaborate the base thickness.

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“…2) on the surfaces [15] [16], i.e., recombination velocity (Sf) at the junction (n-p) [17] [18], (Sb) at the junction (p-p + ) [19] [20], and (Sg) at the grain boundaries in the 3-dimensional [21] [22] model. The solar cell is placed under different operating modes [23] and for different illuminations: monochromatic [24], polychromatic [25], constant multspectral World Journal of Condensed Matter Physics [26].…”

Section: Introductionmentioning

confidence: 99%

Ac Recombination Velocity in a Lamella Silicon Solar Cell

Gueye¹,

Diallo²,

Moustapha³

et al. 2018

WJCMP

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Wavelength dependence of short-circuit current decay in solar cells

Cited by 13 publications

References 11 publications

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

Ac Recombination Velocity in a Lamella Silicon Solar Cell

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Wavelength dependence of short-circuit current decay in solar cells

Cited by 13 publications

References 11 publications

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

Back Illuminated N/P/P&lt;sup&gt;+&lt;/sup&gt; Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

Ac Recombination Velocity in a Lamella Silicon Solar Cell

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Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness