Wavelength dependence of gain recovery time in semiconductor optical amplifiers

Li, X.; Alexandropoulos, Dimitris I.; Adams, M.J.; Lealman, I.F.

doi:10.1117/12.602103

Cited by 7 publications

(1 citation statement)

References 12 publications

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“…For example, their limited saturation output power has to be increased for employing these optical amplifiers in WDM applications in order to avoid the cross-gain modulation (XGM) effects [6]- [7]. In addition, a short gain recovery time of SOAs becomes a key parameter when these devices are used in all-optical high-bit rates communication systems [8]- [9].…”

Section: Introductionmentioning

confidence: 99%

A Wide Study of Gain Transparency Wavelength Evolution in Semiconductor Optical Amplifiers

Amaya

Sharaiha

2008

2008 3rd International Conference on Information and Communication Technologies: From Theory to Applications

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We investigate by numerical calculations the evolution of the gain transparency wavelength λ tr of a semiconductor optical amplifier (SOA) over a wide range of the optical signal power, wavelength, and the SOA bias current. We show that the most critical parameter to control is the input signal power. Our results demonstrated that for a low input signal power, λ tr is the same for all the signal wavelengths. A trade-off over a 30 nm range of HB wavelength in function of the injected signal parameters (wavelength, power and gain) is necessary to an optimized improvement of the SOA performance by the holding beam (HB) injection. Keywords-semiconductor optional amplifier (SOA), gain transparency wavelength, holding beam (HB)

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