Wavelength control of 1.3–1.6 μm light emission from the quantum dots self-formed in GaAs∕InAs short-period superlattices grown on InP (411)A substrates

Mori, Jiro; Nakano, Tamaki; Shimada, Takashi; Hasegawa, Shigehiko; Asahi, H.

doi:10.1063/1.1765860

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…A different approach was used by Mori et al [27] to control the dot size and the emission wavelength. Here, GaAs/InAs short period superlattices were grown on (411)A InP.…”

Section: Growth On High-index Substratesmentioning

confidence: 99%

InP based lasers and optical amplifiers with wire-/dot-like active regions

Reithmaier¹,

Somers²,

Deubert³

et al. 2005

J. Phys. D: Appl. Phys.

134

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Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

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“…A different approach was used by Mori et al [27] to control the dot size and the emission wavelength. Here, GaAs/InAs short period superlattices were grown on (411)A InP.…”

Section: Growth On High-index Substratesmentioning

confidence: 99%

InP based lasers and optical amplifiers with wire-/dot-like active regions

Reithmaier¹,

Somers²,

Deubert³

et al. 2005

J. Phys. D: Appl. Phys.

134

View full text Add to dashboard Cite

show abstract

“…5) We have already demonstrated that the 1300-1600 nm wavelength selfformed QDs are fabricated by growing the GaAs/InAs short period SLs on InP(411)A substrates and that the wide and precise photoluminescence (PL) emission wavelength control is possible by regulating the SL period and the InAs monolayer (ML) number. 6) We have already reported their good optical properties and fabricated the light emitting diodes (LEDs) with these QDs as an active layer. 7) However, in the light output versus driving current curves, the output intensity showed saturation for the driving current of over 100 mA.…”

mentioning

confidence: 99%

Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer

Shimada

Hasegawa

Asahi

2005

Jpn. J. Appl. Phys.

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High lateral density (∼1011 cm-2) and well-aligned quantum dot (QD) structures are self-formed in (GaAs)2(InAs) n short period superlattices grown on InP(411) substrates by gas source molecular beam epitaxy. Light emitting diodes with these QDs as an active layer were fabricated. However, the light output power showed saturation for the driving current of over 100 mA. To overcome this problem, an InAlAs layer was inserted between QD active layer and p-type cladding layer as a current blocking layer. As a result, no saturation of output power was obtained up to 200 mA. Furthermore, pulsed current injection laser operation was realized for these layer structures.

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Improved light output characteristics of GaAs/InAs short-period superlattice quantum dot light emitting diodes by the insertion of InAlAs current blocking layer and laser operation

Shimada

Mori

Hasegawa

et al.

International Conference on Indium Phosphide and Related Materials, 2005.

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High lateral density (-10'' cm-*) and well-aligned quantum dot ( D) structures are self-formed in (GaAs)z(InAs), short period superlattices grown on InP (41 I) substrates by gas source molecular beam epitaxy, Light emitting diodes with these Ds as an active layer were fabricated. However, in the light output versus driving current curves, the output intensity showed saturation for the driving current of over 100 mA. This saturation is considered to be due to the current overflow (electron overflow) through the heterojunction between D active layer and cladding layer. To overcome this problem, an InAIAs layer was inserted between D active layer and p-type cladding layer as a current blocking layer. As a result, no saturation of output power was observed up to 200 mA. Furthermore, laser diodes with these Ds as an active layer were fabricated and current injection laser operation was realized.

show abstract

Wavelength control of 1.3–1.6 μm light emission from the quantum dots self-formed in GaAs∕InAs short-period superlattices grown on InP (411)A substrates

Cited by 3 publications

References 10 publications

InP based lasers and optical amplifiers with wire-/dot-like active regions

InP based lasers and optical amplifiers with wire-/dot-like active regions

Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer

Improved light output characteristics of GaAs/InAs short-period superlattice quantum dot light emitting diodes by the insertion of InAlAs current blocking layer and laser operation

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