Waveguide-type PnpN optical thyristor operating at 1.55 μm

Kim, D.G.; Lee, J.J.; Choi, Young‐Wan; Lee, S.; Kang, Byungsoo; Kim, S.H.; Futakuchi, N.; Nakano, Yoshiaki

doi:10.1109/68.874241

Cited by 11 publications

(7 citation statements)

References 9 publications

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“…In particular, a low-cost and high-powered NIR broadband light source (BLS) is required for a passive optical network (PON) based on the wavelength division multiplexed (WDM) optical communication system for fibre to the home (FTTH) in the near future [28]. At present, a spectrum sliced reflective semiconductor optical amplifier (RSOA) [29] and an erbiumdoped fibre amplifier (EDFA) [30] for the WDM-PON are being researched as an NIR BLS.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characterizations of multi-layered and multi-stacked PbSe quantum dots

Lee¹,

Chung²,

Park³

et al. 2005

Nanotechnology

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A multi-layered nanocomposite thin film was fabricated to increase the density of PbSe quantum dots. It consisted of low-loss polymer layers and multi-stacked PbSe quantum dot layers in series. The solutions of a UV-curable low-loss polymer and PbSe quantum dots were spin-coated layer-by-layer. An arrayed and multi-stacked PbSe quantum dot layer was self-assembled by spin-coating and solvent evaporation. The multi-stacked layers of PbSe quantum dots have a face-centred cubic structure with an average {111} plane distance of ∼6.1 nm, determined by small-angle x-ray scattering. The average diameter of PbSe quantum dots is ∼5 nm and the average interparticle spacing distance is ∼2.5 nm, characterized by transmission electron microscopy. The density of PbSe quantum dots in the single-arrayed layer is ∼1.8 × 1012 cm−2 and the density in the three-layered thin film of multi-stacked PbSe QDs is >1.6 × 1013 cm−2. The peak intensities of absorption and photoluminescence were increased with increasing number of PbSe quantum dot layers. The time of luminescence decay to e−1 is 138 ns at room temperature. We investigated the structures of multi-layered and multi-stacked PbSe quantum dot thin films as well as their optical properties, and then suggested their photonic applications.

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Section: Introductionmentioning

confidence: 99%

Structural and optical characterizations of multi-layered and multi-stacked PbSe quantum dots

Lee¹,

Chung²,

Park³

et al. 2005

Nanotechnology

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“…13) Using the above simulation method, the optimized structure of the DOT is evaluated and I-V characteristics are calculated with variables such as the thickness and the doping densities of the outer AlGaAs layers and the inner GaAs structure.…”

Section: Finite Difference Methodsmentioning

confidence: 99%

Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage

et al. 2003

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For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation.

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“…However, only several decades later it became possible, owing to the development of epitaxial technologies, to obtain results demonstrating the potential of such structures as subnanosecond power electric switches [2] and laser emitters [3][4][5]. Further analysis of the approaches based on the epitaxial integration of a thyristor structure with a laser heterostructure yielded new solutions in the fields of nonlinear conversion and control over the spectral and mode composition of laser light [6], fabrication of elements serving as switches or logical components in information systems [5,[7][8][9], and generation of an ultrabroad laser emission spectrum [10]. The area associated with the development of high-power compact pulsed laser emitters can be separately distinguished.…”

Section: Introductionmentioning

confidence: 99%

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

Podoskin

Soboleva

Zakharov

et al. 2015

Semicond. Sci. Technol.

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An experimental study of factors determining the optical feedback efficiency in the structure of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that the spontaneous emission spectrum undergoes a significant change in the working range of currents due to the presence of GaAs-spacers in the structure of the active region of the laser part and to the absence of saturation of the spontaneous emission flux beyond the lasing threshold. It is demonstrated that the influence exerted by the reverse voltage across the collector p-n junction of the transistor part comes down to the following two effects: deformation of the edge of the absorption spectrum and turn-on of the impact ionization. Experimental dependences of the photogeneration rate on both current and voltage were obtained for the p-base of the transistor part. These dependences are an important tool to be used in subsequent studies aimed to simulate and examine the injection and generation processes in power laser-thyristors.

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Waveguide-type PnpN optical thyristor operating at 1.55 μm

Cited by 11 publications

References 9 publications

Structural and optical characterizations of multi-layered and multi-stacked PbSe quantum dots

Structural and optical characterizations of multi-layered and multi-stacked PbSe quantum dots

Reverse-biased characteristics of GaAs/AlGaAs depleted optical thyristor with low depletion voltage

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

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