Waveguide-integrated pin photodiode on InP

Bornholdt, C.; Döldissen, W.; Fiedler, Fritz; Kaiser, R.; Kowalsky, Wolfgang

doi:10.1049/el:19870002

Cited by 56 publications

(3 citation statements)

References 3 publications

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“…The homojunction structure is a GaInAs p-i-n photodiode integrated on a n-/n+ InP optical waveguide with a 3.6-pm-thick guiding layer [lo]. The heterojunction structure is a GaInAs p-i-n photodiode integrated on a GaInAsP /InP optical waveguide, with a 2.0-pm-thick guiding layer [8].…”

Section: Resultsmentioning

confidence: 99%

Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Vinchant

Vilcot

Decoster

1990

J. Lightwave Technol.

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We report on the theoretical study of an integrated waveguidelphotodetector. We present the optical modeling of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer, deposited on the waveguiding layer.From this modeling, the expression of the electron-hole pair generation rate, for such a device, is established. Then, we apply this result to the calculation of the dynamic quantum efficiency of an integrated waveguidelp-i-n photodiode. The static and dynamic behaviors o f GaInAs p-i-n photodiodes monolithically integrated on a classical n-/n+ InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed and optimized structures are pointed out.

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Section: Resultsmentioning

confidence: 99%

Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Vinchant

Vilcot

Decoster

1990

J. Lightwave Technol.

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“…Unfortunately, this kind of photodiode needs a large active area to absorb the incident light completely due to its special absorption way. [3,4] This results in high capacitance and thus a low bandwidth. In order to improve the bandwidth and reduce the junction capacitance, various methods of enhancing the evanescent coupling, such as grating coupling, [5] butt coupling [6] or ARROW-type coupling, [7] have been proposed, and all of these methods are artful but more complex in fabrication.…”

Section: Introductionmentioning

confidence: 99%

Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55 μm: physics, design and simulation

et al. 2009

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We have studied the optical matching layers (OMLs) and external quantum efficiency in the evanescent coupling photodiodes (ECPDs) integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method (BPM). The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30 μm could absorb 90% of the incident light at 1.55 μm wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer.

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“…Unfortunately I the barrier heights for narrow bandgap compositions of InGaAs prevent the use of Schottky barriers for longer wavelengths. Bornholdt et al [6] reported an InGaAs p-i-n photodiode integrated with an inverted rib waveguide in InGaAsP, but their structure required detector lengths in excess of 300 pm to achieve sufficient responsivity at 1.3 pm. Chandrasekhar et al [7] have recently used a photoconductor with a ridge waveguide and achieved large responsivity in a short detector length using the internal gain of the photoconductor but the structure was limited in speed.…”

Section: Introductionmentioning

confidence: 99%

Integrated waveguide p-i-n photodetector by MOVPE regrowth

Chandrasekhar

Campbell

Dentai

et al. 1987

IEEE Electron Device Lett.

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An InGaAs p-i-n photodetector for detection in the 1.0-1.6 pm wavelength range has been integrated at the end of a ridge waveguide in InP using a metal organic vapor phase epitaxial (MOVPE) regrowth technique. The waveguides had an average propagation loss of 3 dB/cm and 95 percent of the guided light was coupled into the photodetector. The photodetector had a 3-dB bandwidth of 1.5 GHz with a pulse response (full width at half maximum) of 80 ps at 1.3-pm wavelength. This is the first demonstration of an efficient, compact, and high-speed monolithic integrated waveguide-photodetector in the InGaAs/InP material system using epitaxial regrowth.

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Waveguide-integrated pin photodiode on InP

Cited by 56 publications

References 3 publications

Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55 μm: physics, design and simulation

Integrated waveguide p-i-n photodetector by MOVPE regrowth

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