Waveguide design, modeling, and optimization: from photonic nanodevices to integrated photonic circuits

Bordovsky, M.; Catrysse, Peter B.; Dods, S.R.A.; Freitas, M.B.J.G.; Klein, Jackson; Kotacka, Libor; Tzolov, Velko P.; Uzunov, Ivan M.; Zhang, Jiazong

doi:10.1117/12.526976

Cited by 3 publications

(2 citation statements)

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“…is the plasma frequency associated with intraband transitions with oscillator strength 0 and damping constant Γ 0 , while is the number of oscillators with frequency , and 1/Γ is the oscillator lifetime [36]. The following equation accounts for the complex index of refraction and dielectric constant of materials and can be represented as a combined form [37]:…”

Section: Noble Metals and Lorentz-drude Modelmentioning

confidence: 99%

A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity

Das

Masouleh

Mashayekhi

2013

Advances in OptoElectronics

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A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonicbased metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference timedomain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ∼32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.

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Section: Noble Metals and Lorentz-drude Modelmentioning

confidence: 99%

A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity

Das

Masouleh

Mashayekhi

2013

Advances in OptoElectronics

View full text Add to dashboard Cite

show abstract

“…where, Ω p =G 0 1/2 ω p is the plasma frequency associated with intraband transitions with oscillator strength G 0 and damping constant Γ 0 , while m is the number of oscillators with frequency ω m and 1/Γ m is the oscillator lifetime [10]. The following equation accounts for the complex index of refraction and dielectric constant of materials and can be represented as a combined form [11] (4) where,ε r,∞ is the relative permittivity at infinite frequency, G m is the strength of each resonance term, Ω m is the plasma frequency, ω m is the resonant frequency, and Γ m is the damping factor or the collision frequency.…”

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confidence: 99%