Watt-level second-harmonic generation at 589  nm with a PPMgO:LN ridge waveguide crystal pumped by a DBR tapered diode laser

Bege, R.; Jedrzejczyk, Daniel; Blume, G.; Hofmann, Julian; Feise, D.; Paschke, K.; Tränkle, G.

doi:10.1364/ol.41.001530

Cited by 18 publications

(11 citation statements)

References 17 publications

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“…This paper presents the SHG of a 798-nm light using a single-pass periodically-poled LiNbO 3 (PPLN) waveguide. High conversion efficiency in a single-pass configuration can be obtained with a PPLN waveguide, since its waveguide structure allows a tightly confined beam to propagate a long distance in a PPLN crystal [35][36][37]. A PPLN waveguide is therefore attractive for developing a compact and robust laser system at 399 nm.…”

Section: Introductionmentioning

confidence: 99%

Frequency ratio of Yb and Sr clocks with 5 × 10−17 uncertainty at 150 seconds averaging time

Nemitz¹,

Ohkubo²,

Takamoto³

et al. 2016

Nature Photon

210

194

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We demonstrate a compact and robust method for generating a 399-nm light resonant on the 1 S 0 − 1 P 1 transition in ytterbium using a single-pass periodically poled LiNbO 3 waveguide for second harmonic generation (SHG). The obtained output power at 399 nm was 25 mW when a 798-nm fundamental power of 380 mW was coupled to the waveguide. We observed no degradation of the SHG power for 13 hours with a low power of 6 mW. The obtained SHG light has been used as a seed light for injection locking, which provides sufficient power for laser cooling ytterbium.

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Section: Introductionmentioning

confidence: 99%

Frequency ratio of Yb and Sr clocks with 5 × 10−17 uncertainty at 150 seconds averaging time

Nemitz¹,

Ohkubo²,

Takamoto³

et al. 2016

Nature Photon

210

194

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“…This is largely due to the fact that it becomes increasingly difficult to reach high power close to 1.2 µm when using the standard materials. For example, using GaInAs QWs the maximum single-mode power obtained from untapered LDs at 1180 nm is about 230 mW [6] and about 3.2 W for tapered LDs [7]. Using quantum dots with an untapered design, a power of 80 mW has been reported [8].…”

Section: Introductionmentioning

confidence: 99%

High-Power 1180-nm GaInNAs DBR Laser Diodes

Aho

Viheriälä

Korpijärvi

et al. 2017

IEEE Photon. Technol. Lett.

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We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.

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“…Waveguides in non-linear crystals enable high conversion efficiency [25], but suffer from power loss due to low coupling efficiency, scattering losses and decreased efficiency at high powers due to localized thermal effects [26]. To our knowledge the highest power achieved by frequency doubling the emission of a laser diode using waveguides in non-linear crystals are 860 mW for a channel waveguide [27] and 1.07 W for a planar waveguide [28].…”

Section: Introductionmentioning

confidence: 94%

Efficient generation of 19 W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode

Hansen¹,

Christensen²,

Noordegraaf³

et al. 2016

Appl. Opt.

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Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates 1.9 W of single-frequency light at 562.4 nm by cascaded single-pass frequency doubling of the 1124.8 nm emission from a distributed Bragg reflector (DBR) tapered laser diode. The absence of a free-space cavity makes the system stable over a base-plate temperature range of 30 K. At the same time, the use of a laser diode enables the modulation of the pump wavelength by controlling the drive current. This is utilized to achieve a power modulation depth above 90% for the second harmonic light, with a rise time below 40 μs.

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Watt-level second-harmonic generation at 589 nm with a PPMgO:LN ridge waveguide crystal pumped by a DBR tapered diode laser

Cited by 18 publications

References 17 publications

Frequency ratio of Yb and Sr clocks with 5 × 10−17 uncertainty at 150 seconds averaging time

Frequency ratio of Yb and Sr clocks with 5 × 10−17 uncertainty at 150 seconds averaging time

High-Power 1180-nm GaInNAs DBR Laser Diodes

Efficient generation of 19 W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode

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