2005
DOI: 10.1063/1.2119426
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Water reaction with chlorine-terminated silicon (111) and (100) surfaces

Abstract: Hydroxylation of chlorine-terminated silicon (111) and (100) by water vapor exposure has been studied as a function of substrate temperature using in situ infrared absorption spectroscopy. No hydroxyl is observed, as would have been expected from the surface reaction: Si–Cl(ads)+H2O(g)→Si–OH(ads)+HCl(g) (ads referring to adsorbed surface species). Instead, silicon oxide is formed upon removal of the Si–Cl bond at ∼325°C. This indicates that, while hydroxylation of the Cl-terminated silicon surface may occur, t… Show more

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Cited by 23 publications
(33 citation statements)
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“…Surface-bound Si-H groups, however, are highly susceptible to air oxidation and are readily converted to a surface-bound silanol (Si-O-H). [38,39] A strong peak can be observed at 1090 cm −1 in the Si-O region and is ascribed to the strong Si-O-C linkage that is formed at the surface. An O-H band over the 3200-3500 cm −1 range shows the involvement of a silanol group from the insertion of oxygen into a Si-H bond upon air oxidation (Scheme 1).…”
Section: Resultsmentioning
confidence: 97%
“…Surface-bound Si-H groups, however, are highly susceptible to air oxidation and are readily converted to a surface-bound silanol (Si-O-H). [38,39] A strong peak can be observed at 1090 cm −1 in the Si-O region and is ascribed to the strong Si-O-C linkage that is formed at the surface. An O-H band over the 3200-3500 cm −1 range shows the involvement of a silanol group from the insertion of oxygen into a Si-H bond upon air oxidation (Scheme 1).…”
Section: Resultsmentioning
confidence: 97%
“…First, hydrogen-terminated Si(111) surfaces can be functionalized via a wet-chemical technique up to ∼30% of a monolayer with direct Si-O linkages without the formation of any detectable SiO 2 (Figures 2b and 3). This is important because high-temperature gas phase reactions of O 2 on H-Si(111) surfaces or of H 2 O deposition, and subsequent annealing of, reconstructed Si(100) surfaces demonstrate a high preference of subsurface Si-Si back-bonds to oxidize 84 via an oxygen insertion mechanism. 76,85,86 Thus, there is concern that atop Si-O linkages will be unstable toward decomposition via oxygen diffusion into the back bonds and result in electrically defective subsurface oxidation.…”
Section: Discussionmentioning
confidence: 99%
“…The damage to the -Br surfaces is expected given the susceptibility of these monolayers to strongly oxidative conditions, as reported previously. 59,60 -CH 3 terminated surfaces after 30 and 50 W oxygen plasma exposure show measured CA as $57 and $48 , respectively. After 30 and 50 W oxygen plasma the CA of the -CH 3 terminated surface did not approach values for clean glass surfaces.…”
Section: Bi Oxidative Plasma Exposuresmentioning
confidence: 99%