Abstract:The adsorption and dissociation of water molecules on two-dimensional transition metal dichalco- genides (TMDs) is expected to be dominated by point defects, such as vacancies, and edges. At the same...
“…These energies were comparable to the theoretically expected adsorption energies of H 2 O. [ 40,47 ]…”
Section: Resultssupporting
confidence: 80%
“…These energies were comparable to the theoretically expected adsorption energies of H 2 O. [40,47] To address the issue of process instability triggered by builtin dipole moments in Janus MoSSe, we developed a method for fabricating Janus-MoSSe-based FETs using an all-van der Waals heterostructure, as illustrated in Figure 4a,b. We employed pre-patterned CVD-grown graphene as the contact electrode, which was then transferred onto a polycarbonate (PC)/ polydimethylsiloxane (PDMS) stamp.…”
Recently, there has been considerable interest in 2D Janus transition metal dichalcogenides owing to their unique structure that exhibits broken mirror symmetry along the out‐of‐plane direction, which offers fascinating properties that are applicable in various fields. This study investigates the issue of process instability in Janus MoSSe, which is mainly caused by its nonzero net dipole moments. It systematically investigates whether the built‐in dipole moments in Janus MoSSe make it susceptible to delamination by most polar solvents and increase its vulnerability to intense moisture adsorption, which leads to the deterioration of its semiconducting properties. To address these issues, as an example of device applications, field‐effect transistors (FETs) based on a van der Waals heterostructure are devised, where the bottom h‐BN (top h‐BN) insulating material is employed to prevent delamination (adsorption of moisture). The fabricated FETs exhibit improved electron mobility and excellent stability under ambient conditions.
“…These energies were comparable to the theoretically expected adsorption energies of H 2 O. [ 40,47 ]…”
Section: Resultssupporting
confidence: 80%
“…These energies were comparable to the theoretically expected adsorption energies of H 2 O. [40,47] To address the issue of process instability triggered by builtin dipole moments in Janus MoSSe, we developed a method for fabricating Janus-MoSSe-based FETs using an all-van der Waals heterostructure, as illustrated in Figure 4a,b. We employed pre-patterned CVD-grown graphene as the contact electrode, which was then transferred onto a polycarbonate (PC)/ polydimethylsiloxane (PDMS) stamp.…”
Recently, there has been considerable interest in 2D Janus transition metal dichalcogenides owing to their unique structure that exhibits broken mirror symmetry along the out‐of‐plane direction, which offers fascinating properties that are applicable in various fields. This study investigates the issue of process instability in Janus MoSSe, which is mainly caused by its nonzero net dipole moments. It systematically investigates whether the built‐in dipole moments in Janus MoSSe make it susceptible to delamination by most polar solvents and increase its vulnerability to intense moisture adsorption, which leads to the deterioration of its semiconducting properties. To address these issues, as an example of device applications, field‐effect transistors (FETs) based on a van der Waals heterostructure are devised, where the bottom h‐BN (top h‐BN) insulating material is employed to prevent delamination (adsorption of moisture). The fabricated FETs exhibit improved electron mobility and excellent stability under ambient conditions.
“…In the case of a pristine monolayer, the H-atoms prefer to be in the interstitial configuration rather than adatom configurations due to the large primitive cell of MoSe 2 , which provides free space in the hollow site of the Mo-atom plane, as demonstrated earlier. 67 , 68 In the presence of MTB, the H-atom is adsorbed at the center of the hexagon next to the MTB. We note that due to metallic nature of the one-dimensional metallic band at the MTB, the adsorption energy of H-atoms in general depends on the occupancy of the band, i.e., the position of the Fermi level.…”
“…We note that due to metallic nature of the one-dimensional metallic band at the MTB, the adsorption energy of H-atoms in general depends on the occupancy of the band, i.e., the position of the Fermi level. This also gives rise to a difference of about 0.7 eV in the adsorption energy of H-atom when MoSe 2 with the MTB is modeled as a ribbon 67 due to the charge transfer between the metallic states localized at the edges and the MTB. 34 While the MTB does not have any dangling bonds, the vertices contain more complex morphologies with only partially unsaturated bonds, therefore affecting adsorption.…”
Unraveling structure–activity relationships is
a key objective
of catalysis. Unfortunately, the intrinsic complexity and structural
heterogeneity of materials stand in the way of this goal, mainly because
the activity measurements are area-averaged and therefore contain
information coming from different surface sites. This limitation can
be surpassed by the analysis of the noise in the current of electrochemical
scanning tunneling microscopy (EC-STM). Herein, we apply this strategy
to investigate the catalytic activity toward the hydrogen evolution
reaction of monolayer films of MoSe2. Thanks to atomically
resolved potentiodynamic experiments, we can evaluate individually
the catalytic activity of the MoSe2 basal plane, selenium
vacancies, and different point defects produced by the intersections
of metallic twin boundaries. The activity trend deduced by EC-STM
is independently confirmed by density functional theory calculations,
which also indicate that, on the metallic twin boundary crossings,
the hydrogen adsorption energy is almost thermoneutral. The micro-
and macroscopic measurements are combined to extract the turnover
frequency of different sites, obtaining for the most active ones a
value of 30 s–1 at −136 mV vs RHE.
“…Pristine MoS 2 has a quite inert basal plane for ORR catalysis, and only small MoS 2 nanoflakes with a considerably increased ratio of active edge sites can exhibit observable ORR activity 16 – 18 . However, MoS 2 edges have low chemical stability and may incur degrading corrosion and oxidization of nanoflakes when exposed to realistic environments 19 , 20 , thus large-scale MoS 2 flakes should still be preferred for long-lasting performance.…”
Molybdenum disulfide has broad applications in catalysis, optoelectronics, and solid lubrication, where lanthanide (Ln) doping can be used to tune its physicochemical properties. The reduction of oxygen is an electrochemical process important in determining fuel cell efficiency, or a possible environmental-degradation mechanism for nanodevices and coatings consisting of Ln-doped MoS2. Here, by combining density-functional theory calculations and current-potential polarization curve simulations, we show that the dopant-induced high oxygen reduction activity at Ln-MoS2/water interfaces scales as a biperiodic function of Ln type. A defect-state pairing mechanism, which selectively stabilizes the hydroxyl and hydroperoxyl adsorbates on Ln-MoS2, is proposed for the activity enhancement, and the biperiodic chemical trend in activity is found originating from the similar trends in intraatomic 4f–5d6s orbital hybridization and interatomic Ln–S bonding. A generic orbital-chemistry mechanism is described for explaining the simultaneous biperiodic trends observed in many electronic, thermodynamic, and kinetic properties.
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