Wannier-Stark localization in the natural superlattice of silicon carbide polytypes

Sankin, V. I.

doi:10.1134/1.1493739

Cited by 30 publications

(34 citation statements)

References 25 publications

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“…The values for the quantum well width and the energy width of the first electron miniband were taken to be consistent with the experimental data [ 17 , 18 , 22 , 23 ] on high-field transport in SiC natural superlattices, which have demonstrated the evolution of the fundamental stages of WSL in these systems (the transition from a relatively small field regime of Bloch oscillations to large field regimes: the Stark-phonon resonances between Wannier-Stark ladder levels, the full localization of the lowermost miniband, and inter-miniband resonance transitions between the first and second minibands). The most important results of these transport studies are summarized in Table 1 .…”

Section: Methodsmentioning

confidence: 96%

The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

et al. 2012

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We report on efficient terahertz (THz) emission from high-electric-field-biased SiC structures with a natural superlattice at liquid helium temperatures. The emission spectrum demonstrates a single line, the maximum of which shifts linearly with increases in bias field. We attribute this emission to steady-state Bloch oscillations of electrons in the SiC natural superlattice. The properties of the THz emission agree fairly with the parameters of the Bloch oscillator regime, which have been proven by high-field electron transport studies of SiC structures with natural superlattices.

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Section: Methodsmentioning

confidence: 96%

The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

et al. 2012

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“…This difference can be caused due to the tunneling model used for SiC and the non-ideality of impact ionization model in SILVACO TCAD. The built-in impact ionization model of SILVACO TCAD should be complemented to take into account the effects of impact ionization due to super-lattice structure of silicon carbide [4], [23].…”

Section: Resultsmentioning

confidence: 99%

Nanoscale and Microscale Simulations of N-N Junction Heterostructures of 3c-4h Silicon Carbide

Rashid¹,

Koel²,

Rang³

et al. 2017

Materials and Contact Characterisation VIII

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Heterostructures have become essential constituents of most advanced electronic devices. These structures are well suitable for high frequency and fast switching digital electronic applications. Heterostructures are of great interest because motion of charge carriers can be controlled by modifying energy band profiles of constituent materials. During the last few years, heterostructures based on silicon carbide (SiC) polytypes have come to prominence due to their promising physical and electrical properties. Silicon carbide heterostructures fabricated from their most popular polytypes, 3C-SiC, 4H-SiC and 6H-SiC have high value of breakdown voltages and hole mobility. They are extensively used as power electronic devices, sensors and light emitting diodes. Attractive properties and a wide range of applications of SiC heterostructures are pleading the researchers to work in this field. The intention of presented work is to contribute in this area by simulating novel devices based on SiC heterostructures with better electrical properties. For this purpose, heterostructure diodes based on n-type 4H-SiC and n-type 3C-SiC polytypes are simulated at micro and nanoscales. Microlevel simulations have been carried out with the SILVACO TCAD software tool, whereas nanoscale simulations have been done with Quantumwise Atomistix with Virtual Nano Lab (VNL) software toolkit. Different mobility and recombination models appropriate for constituent polytypes have also been implemented during simulations in SILVACO TCAD. Band alignment in structures and IV-curve of microscale simulated device have been deliberated in this paper. Transmission spectrum, projected device density of states (PDDOS) and IV-Curves obtained from nanoscale simulated diodes with titanium, gold and semiconductor itself as an electrode have been investigated and analyzed.

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“…They have been observed in many experiments and interpreted as evidence of Wannier-Stark localization [8][9][10][11]. Nowadays the concept of Wannier-Stark ladder still attracts much attention because it is applied for describing various phenomena in many novel systems such as graphene [12,13], optical lattices [14,15] natural SiC superlattices [16][17][18] and others.…”

Section: Introductionmentioning

confidence: 99%

Partial electron localization in a finite-size superlattice placed in an electric field

Vlasov¹,

Pyataev²,

Shorokhov³

2018

Физика И Техника Полупроводников

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Partial electron localization in a finite-size superlattice placed in an electric field is considered. The role of electric field in forming of quasilocalized states is investigated. A quantitative criterion for the degree of partial localization is suggested based on analysis of maximal probability density of finding an electron at a given point. It is found that with increase in the electric field the degree of localization does not increase monotonically. Furthermore, the localization is affected stronger by the amplitude of superlattice potential than by the electric field.

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Wannier-Stark localization in the natural superlattice of silicon carbide polytypes

Cited by 30 publications

References 25 publications

The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

Nanoscale and Microscale Simulations of N-N Junction Heterostructures of 3c-4h Silicon Carbide

Partial electron localization in a finite-size superlattice placed in an electric field

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