The present work proposes an adhesive bonding technique, at wafer level, using negative photoresist as intermediate layer. The adhesive was selective imprint on one of the bonding surface. The main applications are in microfluidic area where a low temperature bonding is required. The method consists of three major steps. First the adhesive layer is deposited on one of the bonding surface by contact imprinting from a dummy wafer where the SU-8 photoresist was initially spun, orfrom a Teflon cylinder. Second, the wafers to be bonded are placed in contact and aligned. In the last step, the bonding process is performed at temperatures between 1000C and 2000C, a pressure of 1000 N in vacuum on a classical wafer bonding system. The results indicate a low stress value induced by the bonding technique. In the same time the process presents a high yield. 95-100%. The technique was successfully tested in the fabrication process of a dielectrophoretic device.