Wafer temperature measurements and end-point detection during plasma etching by thermal imaging

Patel, Vipulkumar K.; Patel, Moulik; Ayyagari, S.; Kosonocky, Walter F.; Misra, D.; Singh, Bhupinder

doi:10.1063/1.105480

Cited by 9 publications

(2 citation statements)

References 8 publications

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“…The current wafer temperature monitoring methods are mainly divided into two types: non-contact measurement and contact method. Non-contact temperature measurement methods include radiation temperature measurement [8], reflectivity temperature measurement methods [9], infrared transmission temperature measurement [10], refractive index and radiation combined temperature measurement [11], polarization transmission method [12], [13], interferometric temperature measurement [14], [15], infrared thermography temperature measurement [16], [17], acoustic method [18].…”

Section: Introductionmentioning

confidence: 99%

A Real-Time In Situ Wafer Temperature Measurement System Based on Fiber Bragg Grating Array

Feng,

Peng,

et al. 2024

IEEE Sensors J.

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Temperature is an essential parameter in the siliconbased MEMS fabrication process, and the uneven temperature distribution on a wafer surface could significantly impact the whole fabrication process. This research aims to observe the wire bonding system's heating process from 30 ℃ to 110 ℃ . A temperature sensor network consisting of multiple fiber Bragg gratings (FBG) is proposed for real-time wafer surface temperature monitoring. The temperature points measured by FBG sensors are used to construct the temperature distribution of the entire battery surface, enabling tracking of the hotspots during the heating processes. Additionally, a comparative analysis of the FBG sensor network's results was conducted using those gathered by infrared thermal imager and thermocouple sensors. The results indicate the existence of a temperature gradient along the wafer's surface in the radial direction, with a maximum temperature difference of 11.94°C and the temperature distribution taking the shape of approximate concentric circles. The FBG sensor network offers a clear and intuitive illustration of the wafer's surface temperature distribution during heating, providing realtime responses. Therefore, the proposed temperature measurement network based on FBG sensors can effectively monitor the temperature defects on the wafer surface during the MEMS process.

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Section: Introductionmentioning

confidence: 99%

A Real-Time In Situ Wafer Temperature Measurement System Based on Fiber Bragg Grating Array

Feng,

Peng,

et al. 2024

IEEE Sensors J.

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“…Thermographic temperature measurements were optimized for use on thin silicon substrates, to determine the emission coefficient ε at higher temperatures than already reported [8]. This is important because thin silicon layers are largely trans parent for IR radiation, and only emit a small portion that can be used for measurements.…”

Section: Introductionmentioning

confidence: 99%

Reduction of Ag–Si electrical contact resistance by selective RF heating

Wijs

Ljevar

Sande

2016

J. Micromech. Microeng.

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Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s−1. Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates.

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Pyrometry

Herman

1996

Optical Diagnostics for Thin Film Processing

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Wafer temperature measurements and end-point detection during plasma etching by thermal imaging

Cited by 9 publications

References 8 publications

A Real-Time In Situ Wafer Temperature Measurement System Based on Fiber Bragg Grating Array

A Real-Time In Situ Wafer Temperature Measurement System Based on Fiber Bragg Grating Array

Reduction of Ag–Si electrical contact resistance by selective RF heating

Pyrometry

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