Wafer Temperature Measurement in RTP

Schietinger, Chuck

doi:10.1007/978-94-015-8711-2_3

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…Accurate measurement of temperature is required at virtually every stage of fabricating an aluminum part to achieve the desired attributes [4,20]. Similarly, an accurate temperature measurement is important in achieving temperature uniformity of a silicon wafer and batch repeatability in rapid thermal processing, which is a key technique in semiconductor manufacturing [3,21]. It is difficult to implement thermocouples to fast-moving aluminum parts and rotating wafers.…”

Section: Radiative Properties Of Rough Surfacesmentioning

confidence: 99%

Radiative properties of materials with surface scattering or volume scattering: A review

Zhu

Lee

Zhang

2009

Front. Energy Power Eng. China

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Radiative properties of rough surfaces, particulate media and porous materials are important in thermal engineering and many other applications. These properties are often needed for calculating heat transfer between surfaces and volume elements in participating media, as well as for accurate radiometric temperature measurements. In this paper, recent research on scattering of thermal radiation by rough surfaces, fibrous insulation, soot, aerogel, biological materials, and polytetrafluoroethylene (PTFE) is reviewed. Both theoretical modeling and experimental investigation are discussed. Rigorous solutions and approximation methods for surface scattering and volume scattering are described. The approach of using measured surface roughness statistics in Monte Carlo simulations to predict radiative properties of rough surfaces is emphasized. The effects of various parameters on the radiative properties of particulate media and porous materials are summarized.

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Section: Radiative Properties Of Rough Surfacesmentioning

confidence: 99%

Radiative properties of materials with surface scattering or volume scattering: A review

Zhu

Lee

Zhang

2009

Front. Energy Power Eng. China

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“…The radiative properties of the wafer backside [see Fig. 1 also have a profound impact on temperature measurement by pyrometry, which is the most pervasive temperature measurement technique for RTP [5]. Changes in the emissivity of the wafer backside at the pyrometer wavelength can cause significant temperature measurement errors, degrading process repeatability.…”

Section: Introductionmentioning

confidence: 99%

The effect of surface roughness on the radiative properties of patterned silicon wafers

Hebb

Jensen²,

Thomas³

1998

IEEE Trans. Semicond. Manufact.

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The radiative properties of patterned silicon wafers have a major impact on the two critical issues in rapid thermal processing (RTP), namely wafer temperature uniformity and wafer temperature measurement. The surface topography variation of the die area caused by patterning and the roughness of the wafer backside can have a significant effect on the radiative properties, but these effects are not well characterized. We report measurements of room temperature reflectance of a memory die, logic die, and various multilayered wafer backsides. The surface roughness of the die areas and wafer backsides is characterized using atomic force microscopy (AFM). These data are subsequently used to assess the effectiveness of thin film optics in providing approximations for the radiative properties of patterned wafers for RTP applications.

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Wafer temperature measurement in a rapid thermal processor with modulated lamp power

Nguyenphu

Fiory

1999

Journal of Elec Materi

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Wafer Temperature Measurement in RTP

Cited by 4 publications

References 29 publications

Radiative properties of materials with surface scattering or volume scattering: A review

Radiative properties of materials with surface scattering or volume scattering: A review

The effect of surface roughness on the radiative properties of patterned silicon wafers

Wafer temperature measurement in a rapid thermal processor with modulated lamp power

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