Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Abstract

Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensional (3D) MAPbI. However, MAPbI often exhibits less reliable switching behavior probably due to the uncontrollable random formation of conducting filaments. Here, we report the resistive switching property of 2-dimensional (2D) OHP and compare switching characteristics depending on structural dimensionality. The dimensionality is controlled by changing the composition of BAMAPbI (BA = butylammonium, MA = methylammonium), where 2D is formed from n = 1, and 3D is formed from n = ∞. Quasi 2D compositions with n = 2 and 3 are also compared. Transition from a high resistance state (HRS) to a low resistance state (LRS) occurs at 0.25 × 10 V m for 2D BAPbI film, which is lower than those for quasi 2D and 3D. Upon reducing the dimensionality from 3D to 2D, the ON/OFF ratio significantly increases from 10 to 10, which is mainly due to the decreased HRS current. A higher Schottky barrier and thermal activation energy are responsible for the low HRS current. We demonstrate for the first time reliable resistive switching from 4 inch wafer-scale BAPbI thin film working at both room temperature and a high temperature of 87 °C, which strongly suggests that 2D OHP is a promising candidate for resistive switching memory.

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

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Recent Advances toward High‐Efficiency Halide Perovskite Light‐Emitting Diodes: Review and Perspective

“…This PCE value is comparable to those of polycrystalline silicon solar cells, making it the most promising candidate for renewable energy generation in the near future . In addition to the successful use of HPs in solar cells, these materials have also exhibited excellent performance in a wide range of other applications, such as photodetectors, field‐effect transistors, gas sensors, resistive‐switching memory devices, and light‐emitting diodes (LEDs) . Among these, halide perovskite light‐emitting diodes (HPLEDs) shown unprecedented performance with maximum luminance values of up to 91 000 cd m −2 and external quantum efficiencies (EQEs) of over 11.7% .…”

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

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